Tranzistory - FET, MOSFET - polia

STS5DP3LLH6

diel: 158516

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), Rds On (max.) @ Id, Vgs: 56 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

CTLDM8120-M832DS TR

diel: 2989

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 860mA (Ta), Rds On (max.) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

CMLDM7003T TR

diel: 101341

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SQJQ960EL-T1_GE3

diel: 13208

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 63A (Tc), Rds On (max.) @ Id, Vgs: 9 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4946CDY-T1-GE3

diel: 10817

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A (Ta), 6.1A (Tc), Rds On (max.) @ Id, Vgs: 40.9 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI3590DV-T1-E3

diel: 112867

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 1.7A, Rds On (max.) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI5933DC-T1-E3

diel: 2988

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

TPS1120DR

diel: 79109

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 15V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.17A, Rds On (max.) @ Id, Vgs: 180 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

CSD86350Q5D

diel: 61562

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 6 mOhm @ 20A, 8V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

CSD85301Q2

diel: 106554

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

CSD87313DMS

diel: 10773

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

US6J2TR

diel: 151598

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

ZXMC3AMCTA

diel: 166321

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.1A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ZXMN3A06DN8TA

diel: 106246

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN32D4SDW-7

diel: 108857

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 650mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

ZXMP3A16DN8TA

diel: 85137

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.2A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 4.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN61D8LVTQ-7

diel: 110922

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMC1016UPD-13

diel: 160062

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 8.7A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDZ1905PZ

diel: 141781

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Rds On (max.) @ Id, Vgs: 126 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDS4897AC

diel: 185708

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.1A, 5.2A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD4105CT2G

diel: 142228

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

EFC2J004NUZTDG

diel: 16565

FDG6335N

diel: 139409

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FTCO3V455A1

diel: 2644

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 1.66 mOhm @ 80A, 10V,

FDC6301N_G

diel: 3340

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6303N

diel: 133613

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDC7002N

diel: 180782

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 510mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NTMFD4902NFT1G

diel: 169718

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.3A, 13.3A, Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTD5C668NLT4G

diel: 10795

Typ FET: N-Channel, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Ta), 48A (Tc), Rds On (max.) @ Id, Vgs: 8.9 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

FDG6318PZ

diel: 145958

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

IRF7755TRPBF

diel: 2972

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7101TRPBF

diel: 197154

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

IRF7389PBF

diel: 49826

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRLHS6276TR2PBF

diel: 2990

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

CCS020M12CM2

diel: 413

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 29.5A (Tc), Rds On (max.) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA (Typ),

SLA5065

diel: 11897

Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,