Tranzistory - FET, MOSFET - polia

UPA2381T1P-E1-A#YW

diel: 3033

FDMC7200S

diel: 199650

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 13A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C470NT1G

diel: 6526

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (max.) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

NTTFS5C658NLTAG

diel: 328

FW389-TL-2WX

diel: 3022

FW217A-TL-2WX

diel: 2947

NTLJD3183CZTAG

diel: 2939

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, 2.2A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDMC8200

diel: 148681

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 12A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMS7620S

diel: 128539

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.1A, 12.4A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 10.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMS9600S

diel: 66311

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 16A, Rds On (max.) @ Id, Vgs: 8.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FW217A-TL-2W

diel: 198899

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 35V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 6A, 10V,

NTTFS5C478NLTAG

diel: 6464

EFC4626R-TR

diel: 135891

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

SP8J5FU6TB

diel: 68274

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SH8K32TB1

diel: 109582

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

UM6K31NFHATCN

diel: 9908

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA (Ta), Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

SH8M5TB1

diel: 102075

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SI4670DY-T1-E3

diel: 139946

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI5922DU-T1-GE3

diel: 127635

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 19.2 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIZ348DT-T1-GE3

diel: 277

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 7.12 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SIA931DJ-T1-GE3

diel: 160155

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI5904DC-T1-E3

diel: 2972

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

GMM3X180-004X2-SMD

diel: 3178

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

FMP36-015P

diel: 4846

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, 22A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 31A, 10V, Vgs (th) (Max) @ Id: 5.5V @ 250µA,

GMM3X100-01X1-SMDSAM

diel: 3134

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

DMC1030UFDB-7

diel: 177751

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A (Ta), 3.9A (Ta), Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN3015LSD-13

diel: 166732

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.4A (Ta), Rds On (max.) @ Id, Vgs: 15 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

DMP2160UFDBQ-7

diel: 174544

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

DMN63D1LV-13

diel: 219

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 550mA (Ta), Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SSM6N48FU,RF

diel: 3013

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

EPC2111ENGRT

diel: 43248

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Ta), Rds On (max.) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5mA,

FC8V22040L

diel: 119612

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

PMCXB900UELZ

diel: 106017

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, Rds On (max.) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

CTLDM304P-M832DS TR

diel: 191379

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.2A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 4.2A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

STS8DN6LF6AG

diel: 132133

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Ta), Rds On (max.) @ Id, Vgs: 24 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

IRFI4212H-117P

diel: 32918

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,