Tranzistory - FET, MOSFET - polia

NVMFD5C478NWFT1G

diel: 6501

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.8A (Ta), 27A (Tc), Rds On (max.) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 20µA,

FDMA6023PZT

diel: 123244

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMS3626S

diel: 116036

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 25A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

FDG6321C

diel: 176555

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, 410mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTMFD4C20NT3G

diel: 182368

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 13.7A, Rds On (max.) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

FDS89141

diel: 103463

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 62 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5852NLT1G

diel: 78313

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

FDMS3615S

diel: 105235

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 18A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDWS9420-F085

diel: 172

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

EFC2J013NUZTDG

diel: 16524

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

NDC7003P

diel: 145430

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 340mA, Rds On (max.) @ Id, Vgs: 5 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

CSD88539NDT

diel: 108250

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 250µA,

CSD85301Q2T

diel: 172784

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SI6562DQ-T1-GE3

diel: 3013

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

SI1563EDH-T1-GE3

diel: 3023

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, 880mA, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

SI4946BEY-T1-GE3

diel: 150031

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1902DL-T1-E3

diel: 198847

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA, Rds On (max.) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

RJK4034DJE-00#Z0

diel: 3031

DMN2028UFU-7

diel: 120117

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC4050SSD-13

diel: 151827

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

DMP3028LSD-13

diel: 174334

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2300UFL4-7

diel: 182197

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.11A (Ta), Rds On (max.) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

DMN3190LDW-13

diel: 160165

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 190 mOhm @ 1.3A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

DMC3021LK4-13

diel: 125872

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.4A, 6.8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

ZXMD63N02XTA

diel: 98634

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2041UFDB-13

diel: 133918

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

DMN3012LFG-7

diel: 260

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA,

SSM6N37CTD(TPL3)

diel: 2957

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SMA5131

diel: 14190

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A,

SMA5125

diel: 10820

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 5A, 4V, Vgs (th) (Max) @ Id: 2V @ 250µA,

GWM160-0055X1-SL

diel: 2919

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

GWM120-0075P3-SL

diel: 2709

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 118A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

IRF7306TRPBF

diel: 134048

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF7309PBF

diel: 123498

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

CAS300M12BM2

diel: 138

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 423A (Tc), Rds On (max.) @ Id, Vgs: 5.7 mOhm @ 300A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 15mA (Typ),

CCS050M12CM2

diel: 184

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 87A (Tc), Rds On (max.) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA,