Tranzistory - FET, MOSFET - polia

CSD87501L

CSD87501L

diel: 154135

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

Na priania
CSD75207W15

CSD75207W15

diel: 132615

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A, Rds On (max.) @ Id, Vgs: 162 mOhm @ 1A, 1.8V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania
FDG6303N-F169

FDG6303N-F169

diel: 2964

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTZD3155CT1H

NTZD3155CT1H

diel: 142970

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
ECH8661-TL-HX
Na priania
FDMD8240L

FDMD8240L

diel: 56888

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 2.6 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDPC4044

FDPC4044

diel: 42785

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Rds On (max.) @ Id, Vgs: 4.3 mOhm @ 27A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDC6432SH

FDC6432SH

diel: 2951

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

Na priania
NDC7001C

NDC7001C

diel: 161454

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 510mA, 340mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
DMN3032LFDB-13

DMN3032LFDB-13

diel: 198100

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
DMN33D8LDW-7

DMN33D8LDW-7

diel: 111432

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania
DMC1229UFDB-13

DMC1229UFDB-13

diel: 127332

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.6A, 3.8A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMC2041UFDB-7

DMC2041UFDB-7

diel: 172534

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, 3.2A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
DMC1028UFDB-7

DMC1028UFDB-7

diel: 102586

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.4A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMTH6010LPD-13

DMTH6010LPD-13

diel: 135904

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13.1A (Ta), 47.6A (Tc), Rds On (max.) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
DMC4050SSDQ-13

DMC4050SSDQ-13

diel: 146703

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Na priania
DMN3033LSDQ-13

DMN3033LSDQ-13

diel: 167988

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania
ZXMHC3A01T8TA

ZXMHC3A01T8TA

diel: 83555

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, 2A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
ZXMN2A04DN8TC

ZXMN2A04DN8TC

diel: 3343

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.9A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

Na priania
ZXMN10A08DN8TA

ZXMN10A08DN8TA

diel: 139574

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA (Min),

Na priania
SIZ328DT-T1-GE3

SIZ328DT-T1-GE3

diel: 221

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

diel: 281

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Ta), 40A (Tc), Rds On (max.) @ Id, Vgs: 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

Na priania
SI7905DN-T1-E3

SI7905DN-T1-E3

diel: 73624

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI1900DL-T1-GE3

SI1900DL-T1-GE3

diel: 337

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA (Ta), 590mA (Ta), Rds On (max.) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SISB46DN-T1-GE3

SISB46DN-T1-GE3

diel: 104289

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 34A (Tc), Rds On (max.) @ Id, Vgs: 11.71 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
SIZ988DT-T1-GE3

SIZ988DT-T1-GE3

diel: 16265

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A (Tc), 60A (Tc), Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

Na priania
SI6913DQ-T1-E3

SI6913DQ-T1-E3

diel: 71472

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 400µA,

Na priania
QS8M51TR

QS8M51TR

diel: 132178

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 325 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
HP8K22TB

HP8K22TB

diel: 139519

Typ FET: 2 N-Channel (Half Bridge), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 27A, 57A, Rds On (max.) @ Id, Vgs: 4.6 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1

diel: 158126

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 14µA,

Na priania
CMLDM7002AJ TR

CMLDM7002AJ TR

diel: 188305

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
GWM120-0075X1-SLSAM

GWM120-0075X1-SLSAM

diel: 3355

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 110A, Rds On (max.) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania
VMM90-09P

VMM90-09P

diel: 480

Na priania
VKM60-01P1

VKM60-01P1

diel: 1092

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 75A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 4mA,

Na priania
TSM2537CQ RFG

TSM2537CQ RFG

diel: 222

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.6A (Tc), 9A (Tc), Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SSM6L61NU,LF

SSM6L61NU,LF

diel: 154751

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A,

Na priania