Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

CMLDM3737 TR

diel: 117843

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Central Semiconductor Corp

CMLDM7585 TR

diel: 161601

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 650mA, Rds On (max.) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

Central Semiconductor Corp

CMXDM7002A TR

diel: 126593

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Diodes Incorporated

DMC2450UV-13

diel: 171377

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.03A, 700mA, Rds On (max.) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Diodes Incorporated

DMTH6010LPDQ-13

diel: 125205

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13.1A (Ta), 47.6A (Tc), Rds On (max.) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Diodes Incorporated

DMP2066LSD-13

diel: 103006

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

Diodes Incorporated

DMP2004DWK-7

diel: 187523

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 430mA, Rds On (max.) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

ON Semiconductor

NVJD4401NT1G

diel: 192220

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

NVMFD5877NLT1G

diel: 171488

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

NTZD5110NT5G

diel: 3000

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 294mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

ON Semiconductor

FDR8702H

diel: 3117

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, 2.6A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

NTLLD4901NFTWG

diel: 132118

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 6.3A, Rds On (max.) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

ON Semiconductor

FDC6333C

diel: 131502

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 2A, Rds On (max.) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

FDMA3023PZ

diel: 148246

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

ON Semiconductor

FDZ1323NZ

diel: 166913

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

ON Semiconductor

NTMFD4C20NT1G

diel: 166740

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 13.7A, Rds On (max.) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

ON Semiconductor

FDPC5018SG

diel: 62456

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 32A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NXP USA Inc.

SI9936DY,518

diel: 3387

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Cree/Wolfspeed

CAS300M17BM2

diel: 115

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1700V (1.7kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 325A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 225A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 15mA (Typ),

Na priania

Rohm Semiconductor

UT6JA2TCR

diel: 157843

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

SH8J65TB1

diel: 100136

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

UM6K33NTN

diel: 191317

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Na priania

Sanken

SMA5117

diel: 6110

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania

Sanken

SLA5068-LF830

diel: 11177

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

Taiwan Semiconductor Corporation

TSM4946DCS RLG

diel: 16502

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Toshiba Semiconductor and Storage

SSM6P35FE,LM

diel: 173905

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Na priania

Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

diel: 13232

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.7V @ 100µA,

Na priania

STMicroelectronics

STS4DNF60L

diel: 93425

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Micro Commercial Co

MCCD2007-TP

diel: 117884

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SI4618DY-T1-E3

diel: 113583

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 15.2A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Vishay Siliconix

SI7901EDN-T1-E3

diel: 3002

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 800µA,

Na priania

Texas Instruments

CSD75301W1015

diel: 2951

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.2A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IRF7380TRPBF

diel: 159831

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Infineon Technologies

IRF9956PBF

diel: 2963

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

DF23MR12W1M1B11BOMA1

diel: 3162

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 25A, 15V, Vgs (th) (Max) @ Id: 5.5V @ 10mA,

Na priania

IXYS

FMM22-06PF

diel: 4230

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, Rds On (max.) @ Id, Vgs: 350 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania