Tranzistory - FET, MOSFET - polia

NTMFD4C85NT1G

diel: 29711

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15.4A, 29.7A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

NTMFD5C470NLT1G

diel: 6471

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), 36A (Tc), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

FDMQ8203

diel: 55066

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.6A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5C650NLWFT1G

diel: 9967

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Ta), 111A (Tc), Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 98µA,

NTGD3133PT1G

diel: 3323

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

FDS8958B_G

diel: 2939

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 4.5A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC8822R-TF

diel: 3006

MCH6605-TL-EX

diel: 2947

FDMS3620S

diel: 94876

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 38A, Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

FDMS8095AC

diel: 54792

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, 1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5C680NLWFT1G

diel: 6505

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (max.) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

EFC3C001NUZTCG

diel: 153532

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

NTMFD4C86NT1G

diel: 26834

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.3A, 18.1A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDS8949-F085

diel: 10816

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDG6304P

diel: 174228

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA, Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS8934

diel: 3124

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FMP76-01T

diel: 227

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 54A (Tc), 62A (Tc), Rds On (max.) @ Id, Vgs: 24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA,

FMM50-025TF

diel: 5089

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

VMK90-02T2

diel: 1263

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 83A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 3mA,

SI1539DDL-T1-GE3

diel: 3368

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA (Tc), 460mA (Tc), Rds On (max.) @ Id, Vgs: 388 mOhm @ 600mA, 10V, 1.07 Ohm @ 400mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA,

SI4565ADY-T1-GE3

diel: 3004

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 5.6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI3552DV-T1-E3

diel: 116715

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SQ3985EV-T1_GE3

diel: 9989

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A (Tc), Rds On (max.) @ Id, Vgs: 145 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

RJM0603JSC-00#13

diel: 3358

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

DMNH6042SSDQ-13

diel: 171893

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16.7A (Tc), Rds On (max.) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ZXMC3A17DN8TA

diel: 125228

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, 3.4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMC3028LSDXQ-13

diel: 198368

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 5.8A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2016LFG-7

diel: 115776

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

DMG6898LSDQ-13

diel: 192348

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

PMDPB95XNE2X

diel: 126919

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A (Ta), Rds On (max.) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

PMGD290UCEAX

diel: 122614

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 725mA, 500mA, Rds On (max.) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

PHC21025,118

diel: 68440

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 1mA,

IRF8910TRPBF

diel: 184858

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

KGF16N05D-400

diel: 3372

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 5.5V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Ta), Rds On (max.) @ Id, Vgs: 0.95 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 0.9V @ 250µA,

TSM6502CR RLG

diel: 10781

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A (Tc), 18A (Tc), Rds On (max.) @ Id, Vgs: 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SSM6P41FE(TE85L,F)

diel: 13283

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 720mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,