Tranzistory - FET, MOSFET - polia

UT6MA3TCR

diel: 168810

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 5.5A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

US6K4TR

diel: 182371

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SI4963BDY-T1-E3

diel: 147270

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI1926DL-T1-GE3

diel: 137693

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SQJQ906E-T1_GE3

diel: 8627

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A (Tc), Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

SI4542DY-T1-E3

diel: 5348

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SIZ320DT-T1-GE3

diel: 9923

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), 40A (Tc), Rds On (max.) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SIZ926DT-T1-GE3

diel: 127180

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A (Tc), 60A (Tc), Rds On (max.) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

DMP2100UFU-13

diel: 120668

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

DMP56D0UV-7

diel: 162948

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, Rds On (max.) @ Id, Vgs: 6 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

DMTH4011SPDQ-13

diel: 10790

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.1A (Ta), 42A (Tc), Rds On (max.) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

DMN1033UCB4-7

diel: 176877

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate,

DMN62D0UT-7

diel: 168813

DMP4050SSD-13

diel: 182962

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMP4050SSDQ-13

diel: 118936

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2990UDJ-7

diel: 123709

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA, Rds On (max.) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC1028UFDB-13

diel: 170162

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.4A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC31D5UDJ-7

diel: 115591

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, 200mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN5L06DWK-7

diel: 166070

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN3032LFDBQ-13

diel: 174423

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A (Ta), Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

FDS8984_F123

diel: 2990

NTTFS5C466NLTAG

diel: 287

Typ FET: N-Channel, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A (Ta), 51A (Tc), Rds On (max.) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDMC8032L

diel: 190294

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTZD3155CT5G

diel: 3321

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTHD4401PT3G

diel: 2940

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NVMFD5C478NLT1G

diel: 6504

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.5A (Ta), 29A (Tc), Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

SSD2009ATF

diel: 2953

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

HCT802TXV

diel: 1527

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 90V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.1A, Rds On (max.) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

VMM90-09F

diel: 423

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 85A, Rds On (max.) @ Id, Vgs: 76 mOhm @ 65A, 10V, Vgs (th) (Max) @ Id: 5V @ 30mA,

GWM180-004X2-SMDSAM

diel: 3093

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Rds On (max.) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

VMM1500-0075P

diel: 2957

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1500A, Rds On (max.) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

CAS325M12HM2

diel: 70

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 444A (Tc), Rds On (max.) @ Id, Vgs: 4.3 mOhm @ 400A, 20V, Vgs (th) (Max) @ Id: 4V @ 105mA,

FCAB21490L1

diel: 124322

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.4V @ 1.11mA,

SSM6L35FU(TE85L,F)

diel: 156233

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, 100mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

EPC2103ENGRT

diel: 13895

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

STS8C5H30L

diel: 97728

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 5.4A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,