Tranzistory - FET, MOSFET - polia

FDS3890

diel: 94529

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5853NT1G

diel: 93756

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NTMFD5C680NLT1G

diel: 134

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (max.) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

VEC2315-TL-W

diel: 104072

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 137 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

NVMFD5C466NT1G

diel: 202

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A (Ta), 49A (Tc), Rds On (max.) @ Id, Vgs: 8.1 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

ECH8659-TL-W

diel: 134439

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDMD8540L

diel: 32944

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 33A, 156A, Rds On (max.) @ Id, Vgs: 1.5 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8667-TL-H

diel: 184233

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 2.5A, 10V,

NVMFD5C668NLWFT1G

diel: 150

NVMFD5C650NLT1G

diel: 53

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Ta), 111A (Tc), Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 98µA,

MCH6664-TL-W

diel: 105892

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 325 mOhm @ 800mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

STZD3155CT1G

diel: 125221

EFC4619R-TR

diel: 178337

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive,

FDMD82100

diel: 51947

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDS4501H

diel: 130119

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.3A, 5.6A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 9.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

CWDM305PD TR13

diel: 166145

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 2.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

VT6M1T2CR

diel: 125142

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

EM6J1T2R

diel: 109230

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

TT8J13TCR

diel: 181566

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

US6J11TR

diel: 145887

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

TT8J11TCR

diel: 175857

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SP8M24FRATB

diel: 109

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), 3.5A (Ta), Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

DMN1006UCA6-7

diel: 141

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

DMN1002UCA6-7

diel: 56

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard,

DMNH4015SSD-13

diel: 191364

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), Rds On (max.) @ Id, Vgs: 15 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2023UCB4-7

diel: 119

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), Vgs (th) (Max) @ Id: 1.3V @ 1mA,

DMC3025LNS-7

diel: 178643

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A (Ta), 6.8A (Ta), Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI4505DY-T1-E3

diel: 118937

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

SI4808DY-T1-E3

diel: 80900

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

SI7962DP-T1-E3

diel: 38892

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.1A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

SLA5059

diel: 27839

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 550 mOhm @ 2A, 4V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SMA5112

diel: 14169

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 500 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

SLA5065 LF830

diel: 11369

Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

STS5DNF60L

diel: 107885

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

MTM763250LBF

diel: 103755

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 1A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 1A, 4V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

MTM684100LBF

diel: 135215

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 1A, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,