Tranzistory - FET, MOSFET - polia

BSS138DWQ-7

BSS138DWQ-7

diel: 137105

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
BSS138DWQ-13

BSS138DWQ-13

diel: 113029

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
BSS138DW-7-F

BSS138DW-7-F

diel: 105835

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
BSS84V-7

BSS84V-7

diel: 195633

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 130mA, Rds On (max.) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BSM120D12P2C005

BSM120D12P2C005

diel: 258

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 120A (Tc), Vgs (th) (Max) @ Id: 2.7V @ 22mA,

Na priania
BSM180D12P2C101

BSM180D12P2C101

diel: 243

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 204A (Tc), Vgs (th) (Max) @ Id: 4V @ 35.2mA,

Na priania
BUK7K18-40EX

BUK7K18-40EX

diel: 171094

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24.2A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania
BUK9K89-100E,115

BUK9K89-100E,115

diel: 171088

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12.5A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

Na priania
BSS138BKS,115

BSS138BKS,115

diel: 129700

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 320mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Na priania
BUK9K8R7-40EX

BUK9K8R7-40EX

diel: 140529

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

Na priania
BUK9K45-100E,115

BUK9K45-100E,115

diel: 140499

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

Na priania
BUK9K29-100E,115

BUK9K29-100E,115

diel: 120044

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

Na priania
BUK9K134-100EX

BUK9K134-100EX

diel: 189637

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.5A, Rds On (max.) @ Id, Vgs: 159 mOhm @ 5A, 5V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

Na priania
BSS84AKS/ZLX

BSS84AKS/ZLX

diel: 3372

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA (Ta), Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania
BUK9MTT-65PBB,518

BUK9MTT-65PBB,518

diel: 3325

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A (Tc), Rds On (max.) @ Id, Vgs: 90.4 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MRR-65PKK,518

BUK9MRR-65PKK,518

diel: 3041

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A (Tc), Rds On (max.) @ Id, Vgs: 60.7 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MNN-65PKK,518

BUK9MNN-65PKK,518

diel: 3039

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A (Tc), Rds On (max.) @ Id, Vgs: 32.8 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MJJ-65PLL,518

BUK9MJJ-65PLL,518

diel: 3037

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.6A (Tc), Rds On (max.) @ Id, Vgs: 15.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MGP-55PTS,518

BUK9MGP-55PTS,518

diel: 2984

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16.9A (Tc), 9.16A (Tc), Rds On (max.) @ Id, Vgs: 9 mOhm @ 10A, 10V, 22.6 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MHH-65PNN,518

BUK9MHH-65PNN,518

diel: 3036

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), Rds On (max.) @ Id, Vgs: 10.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MFF-65PSS,518

BUK9MFF-65PSS,518

diel: 2995

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 65V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13.6A (Tc), Rds On (max.) @ Id, Vgs: 12.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BUK9MJT-55PRF,518

BUK9MJT-55PRF,518

diel: 2797

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Rds On (max.) @ Id, Vgs: 13.8 mOhm @ 10A, 10V,

Na priania
BSL308CH6327XTSA1

BSL308CH6327XTSA1

diel: 146163

Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, 2A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

Na priania
BSC0911NDATMA1

BSC0911NDATMA1

diel: 94888

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, 30A, Rds On (max.) @ Id, Vgs: 3.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
BSO615NGHUMA1

BSO615NGHUMA1

diel: 20316

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 20µA,

Na priania
BSO330N02KGFUMA1

BSO330N02KGFUMA1

diel: 3005

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 20µA,

Na priania
BTS7904SAKSA1

BTS7904SAKSA1

diel: 2985

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

Na priania
BSO4804HUMA2

BSO4804HUMA2

diel: 2904

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Ta), Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

Na priania
BSL806NL6327HTSA1

BSL806NL6327HTSA1

diel: 2870

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 11µA,

Na priania
BSL207NL6327HTSA1

BSL207NL6327HTSA1

diel: 2845

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

Na priania
BSL308PEL6327HTSA1

BSL308PEL6327HTSA1

diel: 3339

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1V @ 11µA,

Na priania
BSL308CL6327HTSA1

BSL308CL6327HTSA1

diel: 2842

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, 2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

Na priania
BSL314PEL6327HTSA1

BSL314PEL6327HTSA1

diel: 3308

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 6.3µA,

Na priania
BSD840N L6327

BSD840N L6327

diel: 2834

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 1.6µA,

Na priania
BSL306NL6327HTSA1

BSL306NL6327HTSA1

diel: 3344

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

Na priania
BUK7K6R2-40E/CX
Na priania