Tranzistory - FET, MOSFET - polia

NTGD4167CT1G

NTGD4167CT1G

diel: 114403

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, 1.9A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDMS3664S

FDMS3664S

diel: 180120

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 25A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Na priania
NTJD1155LT1G

NTJD1155LT1G

diel: 149235

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
FDMD8560L

FDMD8560L

diel: 41533

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 93A, Rds On (max.) @ Id, Vgs: 3.2 mOhm @ 22A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
EFC4C012NLTDG

EFC4C012NLTDG

diel: 115

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

Na priania
NVMFD5C462NLT1G

NVMFD5C462NLT1G

diel: 139

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A (Ta), 84A (Tc), Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

Na priania
FDMS7700S

FDMS7700S

diel: 61271

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 22A, Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
ECH8654-TL-H

ECH8654-TL-H

diel: 186362

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 3A, 4.5V,

Na priania
SI6975DQ-T1-E3

SI6975DQ-T1-E3

diel: 56765

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

Na priania
SI6975DQ-T1-GE3

SI6975DQ-T1-GE3

diel: 89660

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

Na priania
SI6954ADQ-T1-GE3

SI6954ADQ-T1-GE3

diel: 102782

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
SI7904BDN-T1-GE3

SI7904BDN-T1-GE3

diel: 165688

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI4276DY-T1-E3

SI4276DY-T1-E3

diel: 139906

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
DMC6070LND-7

DMC6070LND-7

diel: 115806

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, 2.4A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
DMHC4035LSD-13

DMHC4035LSD-13

diel: 190231

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, 3.7A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
DMS3019SSD-13

DMS3019SSD-13

diel: 162279

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5.7A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
DMN2022UNS-7

DMN2022UNS-7

diel: 109123

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.7A (Ta), Rds On (max.) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMN3016LDV-13

DMN3016LDV-13

diel: 145769

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
DMP4047SSD-13

DMP4047SSD-13

diel: 153243

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 4.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
DMP22D4UDA-7B

DMP22D4UDA-7B

diel: 125

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 328mA (Ta), Rds On (max.) @ Id, Vgs: 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMTH6016LSDQ-13

DMTH6016LSDQ-13

diel: 146385

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A (Ta), Rds On (max.) @ Id, Vgs: 19.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
DMC4029SSDQ-13

DMC4029SSDQ-13

diel: 181

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Ta), 6.5A (Ta), Rds On (max.) @ Id, Vgs: 24 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
DMG4822SSDQ-13

DMG4822SSDQ-13

diel: 186

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Ta), Rds On (max.) @ Id, Vgs: 21 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
ZXMD63N03XTA

ZXMD63N03XTA

diel: 63691

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
DMG1026UVQ-7

DMG1026UVQ-7

diel: 165393

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 440mA (Ta), Rds On (max.) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Na priania
DMG9926USD-13

DMG9926USD-13

diel: 131794

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania
DMC3025LDV-13

DMC3025LDV-13

diel: 182397

Typ FET: N and P-Channel, Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
DMN65D8LDWQ-13
Na priania
DMN13M9UCA6-7

DMN13M9UCA6-7

diel: 87

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Na priania
UPA3753GR-E1-AT

UPA3753GR-E1-AT

diel: 158590

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 2.5A, 10V,

Na priania
SLA5037

SLA5037

diel: 14765

Typ FET: 4 N-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250mA,

Na priania
SLA5096

SLA5096

diel: 27227

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A,

Na priania
SP8K52FRATB

SP8K52FRATB

diel: 115

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Ta), Rds On (max.) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
TT8J3TR

TT8J3TR

diel: 193760

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
MCCD2005-TP

MCCD2005-TP

diel: 159326

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
MTM684110LBF

MTM684110LBF

diel: 152523

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 1A, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Na priania