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Tranzistory - FET, MOSFET - polia

BSL315PL6327HTSA1
Infineon Technologies

BSL315PL6327HTSA1

diel: 2825

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

Na priania
BSL215CL6327HTSA1
Infineon Technologies

BSL215CL6327HTSA1

diel: 2784

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,

Na priania
BSL215PL6327HTSA1
Infineon Technologies

BSL215PL6327HTSA1

diel: 2866

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

Na priania
BSL205NL6327HTSA1
Infineon Technologies

BSL205NL6327HTSA1

diel: 5353

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

Na priania
BSD235N L6327
Infineon Technologies

BSD235N L6327

diel: 3373

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, Rds On (max.) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

Na priania
BSL214NL6327HTSA1
Infineon Technologies

BSL214NL6327HTSA1

diel: 2788

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,

Na priania
BSL316CL6327HTSA1
Infineon Technologies

BSL316CL6327HTSA1

diel: 2849

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.4A, 1.5A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2V @ 3.7µA,

Na priania
BSD235C L6327
Infineon Technologies

BSD235C L6327

diel: 2795

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, 530mA, Rds On (max.) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

Na priania
BTS7904BATMA1
Infineon Technologies

BTS7904BATMA1

diel: 2849

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 11.7 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

Na priania
BSD223P L6327
Infineon Technologies

BSD223P L6327

diel: 2843

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 390mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.5µA,

Na priania
BSO200N03
Infineon Technologies

BSO200N03

diel: 2769

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7.9A, 10V, Vgs (th) (Max) @ Id: 2V @ 13µA,

Na priania
BSO350N03
Infineon Technologies

BSO350N03

diel: 2710

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 6µA,

Na priania
BSO150N03
Infineon Technologies

BSO150N03

diel: 2753

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2V @ 25µA,

Na priania
BSO303PNTMA1
Infineon Technologies

BSO303PNTMA1

diel: 2695

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 100µA,

Na priania
BSO615CT
Infineon Technologies

BSO615CT

diel: 2762

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, 2A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2V @ 20µA,

Na priania
BSO4804T
Infineon Technologies

BSO4804T

diel: 2714

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

Na priania
BSO612CV
Infineon Technologies

BSO612CV

diel: 2724

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Na priania
BSO615N
Infineon Technologies

BSO615N

diel: 2704

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 20µA,

Na priania
BSO215C
Infineon Technologies

BSO215C

diel: 2649

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 2V @ 10µA,

Na priania
BSO4804
Infineon Technologies

BSO4804

diel: 2708

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

Na priania
BSO207PNTMA1
Infineon Technologies

BSO207PNTMA1

diel: 2681

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 40µA,

Na priania
BSO203PNTMA1
Infineon Technologies

BSO203PNTMA1

diel: 2677

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 100µA,

Na priania
BSO204PNTMA1
Infineon Technologies

BSO204PNTMA1

diel: 2710

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 60µA,

Na priania
BSD223P
Infineon Technologies

BSD223P

diel: 3281

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 390mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.5µA,

Na priania
BSD235NH6327XTSA1
Infineon Technologies

BSD235NH6327XTSA1

diel: 196176

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, Rds On (max.) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

Na priania
BSO211PNTMA1
Infineon Technologies

BSO211PNTMA1

diel: 2608

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 25µA,

Na priania
BSO220N03MDGXUMA1
Infineon Technologies

BSO220N03MDGXUMA1

diel: 21576

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania
BSC150N03LDGATMA1
Infineon Technologies

BSC150N03LDGATMA1

diel: 32315

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
BSO150N03MDGXUMA1
Infineon Technologies

BSO150N03MDGXUMA1

diel: 53402

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 9.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
BSG0810NDIATMA1
Infineon Technologies

BSG0810NDIATMA1

diel: 66407

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 39A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
BSG0811NDATMA1
Infineon Technologies

BSG0811NDATMA1

diel: 73789

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 41A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
BSG0813NDIATMA1
Infineon Technologies

BSG0813NDIATMA1

diel: 73114

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 33A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
BSS8402DW-7
Diodes Incorporated

BSS8402DW-7

diel: 2712

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 115mA, 130mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
BSS84DW-7
Diodes Incorporated

BSS84DW-7

diel: 2665

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 130mA, Rds On (max.) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
BSS138DW-7
Diodes Incorporated

BSS138DW-7

diel: 2708

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
BSS84AKV,115
Nexperia USA Inc.

BSS84AKV,115

diel: 198874

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 170mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania