Tranzistory - FET, MOSFET - polia

TC6320TG-G

diel: 68318

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Rds On (max.) @ Id, Vgs: 7 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

TC7920K6-G

diel: 49864

Typ FET: 2 N and 2 P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Rds On (max.) @ Id, Vgs: 10 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 1mA,

TD9944TG-G

diel: 65575

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 240V, Rds On (max.) @ Id, Vgs: 6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMN62D0UDW-13

diel: 155691

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN21D1UDA-7B

diel: 144

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 455mA (Ta), Rds On (max.) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMP6A16DN8QTA

diel: 85500

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMC3025LNS-13

diel: 159648

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A (Ta), 6.8A (Ta), Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

DMN2990UDJQ-7

diel: 178697

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA (Ta), Rds On (max.) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN601VKQ-7

diel: 118878

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

DMN2008LFU-7

diel: 177281

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14.5A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250A,

ZXMC3A16DN8TA

diel: 87629

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, 4.1A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMGD7N45SSD-13

diel: 105022

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 450V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), Rds On (max.) @ Id, Vgs: 4 Ohm @ 400mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

DMC4047LSD-13

diel: 107463

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5.1A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

DMNH6022SSD-13

diel: 191300

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A, 22.6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN61D8LVT-7

diel: 191757

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMN2022UNS-13

diel: 159447

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.7A (Ta), Rds On (max.) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SC8673040L

diel: 67245

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 46A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 5.85mA,

SC8673010L

diel: 63520

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 40A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 4.38mA,

NVMFD5485NLWFT1G

diel: 81328

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EFC6604R-TR

diel: 146764

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive,

NTMFD5C446NLT1G

diel: 65

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Ta), 145A (Tc), Rds On (max.) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 90µA,

NTZD3155CT1G

diel: 120582

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDMD8900

diel: 75697

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 17A, Rds On (max.) @ Id, Vgs: 4 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EFC6605R-V-TR

diel: 166880

VEC2415-TL-W-Z

diel: 88

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Ta), Rds On (max.) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDMC6890NZ

diel: 169827

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI4542DY

diel: 41210

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTZD3154NT5G

diel: 195594

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTGD3148NT1G

diel: 137924

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS8935

diel: 118941

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 183 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5877NLT3G

diel: 193353

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMD84100

diel: 50072

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI1033X-T1-GE3

diel: 174190

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 145mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SIA777EDJ-T1-GE3

diel: 187147

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, 4.5A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

EM6K31T2R

diel: 181152

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

EM6K31GT2R

diel: 153168

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,