Tranzistory - FET, MOSFET - polia

SP8K32FRATB

diel: 80

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

HP8S36TB

diel: 130641

Typ FET: 2 N-Channel (Half Bridge), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 27A, 80A, Rds On (max.) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

US6K1TR

diel: 126806

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania

US6M2GTR

diel: 127

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, 1A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA,

Na priania

HS8K11TB

diel: 188805

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 11A, Rds On (max.) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

TT8K2TR

diel: 164928

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania

Panasonic Electronic Components

TT8M2TR

diel: 126279

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania

FC8J33040L

diel: 178049

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 33V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 260µA,

Na priania

ZXMN2088DE6TA

diel: 158779

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 200 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

DMC3025LDV-7

diel: 189831

Typ FET: N and P-Channel, Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

DMHC6070LSD-13

diel: 158503

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, 2.4A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

DMC3021LSDQ-13

diel: 112926

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.5A, 7A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

DMC3028LSDX-13

diel: 179812

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 5.8A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ZXMN6A09DN8TA

diel: 63423

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ECH8695R-TL-W

diel: 130870

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Na priania

FDMS3606S

diel: 103403

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 27A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Na priania

FW297-TL-2W

diel: 151817

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Na priania

FDMS3602AS

diel: 95320

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, 26A, Rds On (max.) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

FDMC7208S

diel: 116029

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 16A, Rds On (max.) @ Id, Vgs: 9 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

FDMS7600AS

diel: 69548

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 22A, Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

FDMD8680

diel: 74712

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 66A (Tc), Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

NVMD6P02R2G

diel: 115513

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

FDMQ86530L

diel: 57140

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI4532DY

diel: 183986

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A, 3.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NTLUD4C26NTAG

diel: 108

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A (Ta), Rds On (max.) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

SI4943BDY-T1-GE3

diel: 73684

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI6954ADQ-T1-E3

diel: 197681

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

SI8900EDB-T2-E1

diel: 45537

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Vgs (th) (Max) @ Id: 1V @ 1.1mA,

Na priania