Tranzistory - FET, MOSFET - polia

NVMFD5489NLWFT1G

diel: 87425

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDMC7200

diel: 104070

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 8A, Rds On (max.) @ Id, Vgs: 23.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C462NT1G

diel: 57

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.6A (Ta), 70A (Tc), Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

NVMFD5C462NWFT1G

diel: 119

FDMS7602S

diel: 55912

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 17A, Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C674NLT1G

diel: 108

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), 42A (Tc), Rds On (max.) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 25µA,

FDPC5030SG

diel: 68643

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 25A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMS3604S

diel: 150402

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 23A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

FDMD8430

diel: 165

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A (Ta), 95A (Tc), Rds On (max.) @ Id, Vgs: 2.12 mOhm @ 28A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDS6898AZ

diel: 148041

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.4A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NVTJD4001NT2G

diel: 152238

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

NTLJD3115PT1G

diel: 178911

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NVMFD5C462NLWFT1G

diel: 58

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A (Ta), 84A (Tc), Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

EFC3J018NUZTDG

diel: 158

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Ta), Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

NTMFD5C462NLT1G

diel: 129

FF23MR12W1M1B11BOMA1

diel: 163

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 50A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 50A, 15V, Vgs (th) (Max) @ Id: 5.55V @ 20mA,

SP8M51FRATB

diel: 152

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Ta), 2.5A (Ta), Rds On (max.) @ Id, Vgs: 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TT8M3TR

diel: 154779

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 2.4A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

HP8KA1TB

diel: 113065

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 10mA,

SP8K22FRATB

diel: 87

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SP8K33FRATB

diel: 149

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), Rds On (max.) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TT8K1TR

diel: 171251

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

TT8K11TCR

diel: 195555

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 71 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1A,

SI7900AEDN-T1-GE3

diel: 139913

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

SUD50NP04-77P-T4E3

diel: 118918

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI6968BEDQ-T1-GE3

diel: 192809

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI4936CDY-T1-E3

diel: 152475

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI3948DV-T1-GE3

diel: 139953

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMP3036SSD-13

diel: 156076

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN2008LFU-13

diel: 196776

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14.5A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

DMNH4026SSDQ-13

diel: 107503

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), Rds On (max.) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMC2990UDJQ-7B

diel: 199195

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA (Ta), 310mA (Ta), Rds On (max.) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN16M9UCA6-7

diel: 135

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

DMC2038LVTQ-7

diel: 174791

Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A (Ta), 2.6A (Ta), Rds On (max.) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

MTMC8E2A0LBF

diel: 184943

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

STL8DN10LF3

diel: 83671

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,