Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 32A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 44µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 25µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, 2A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2V @ 20µA,
Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,
Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, 3.2A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 110µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 1.6µA,
Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1V @ 11µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,
Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 6.3µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A (Ta), Rds On (max.) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 11µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,
Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.4A, 1.5A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2V @ 3.7µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, 530mA, Rds On (max.) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 390mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.5µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, Rds On (max.) @ Id, Vgs: 82.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20.7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18.2A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.8A, Rds On (max.) @ Id, Vgs: 121 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15.4A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 27A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 320mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 320mA (Ta), Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 115mA, 130mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 130mA, Rds On (max.) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,
