Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

APTM10DUM05TG

diel: 2783

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 278A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

Na priania

Microsemi Corporation

APTM10DHM09TG

diel: 2789

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Na priania

Microsemi Corporation

APTM10DDAM19T3G

diel: 2824

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 70A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania

Microsemi Corporation

APTM100TDU35PG

diel: 2796

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania

Microsemi Corporation

APTM10DDAM09T3G

diel: 2768

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Na priania

Microsemi Corporation

APTM100DUM90G

diel: 2758

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 78A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania

Microsemi Corporation

APTM100H80FT1G

diel: 2809

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania

Microsemi Corporation

APTM100DU18TG

diel: 2809

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 43A, Rds On (max.) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania

Microsemi Corporation

APTM100DDA35T3G

diel: 2731

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania

Microsemi Corporation

APTM100A46FT1G

diel: 2813

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, Rds On (max.) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania

Microsemi Corporation

APTM100A40FT1G

diel: 2805

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A, Rds On (max.) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania

Microsemi Corporation

APTM100A12STG

diel: 2822

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 68A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania

Microsemi Corporation

APTM100A23SCTG

diel: 2760

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania

Microsemi Corporation

APTM08TDUM04PG

diel: 2746

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 120A, Rds On (max.) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania

Microsemi Corporation

APTC80H29T1G

diel: 2742

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Na priania

Microsemi Corporation

APTC80DSK29T3G

diel: 2793

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Na priania

Microsemi Corporation

APTC80H29SCTG

diel: 1092

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Na priania

Microsemi Corporation

APTC80DDA29T3G

diel: 2788

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Na priania

Microsemi Corporation

APTC80A15T1G

diel: 2799

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Na priania

Microsemi Corporation

APTC80AM75SCG

diel: 594

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 56A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 4mA,

Na priania

Microsemi Corporation

APTC80A10SCTG

diel: 863

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 42A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Na priania

Microsemi Corporation

APTC60DSKM70T3G

diel: 2751

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania

Microsemi Corporation

APTC60DSKM35T3G

diel: 2727

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Na priania

Microsemi Corporation

APTC60DDAM70T3G

diel: 2741

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania

Microsemi Corporation

APTC60AM70T1G

diel: 2769

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania

Alpha & Omega Semiconductor Inc.

AON5802A

diel: 2728

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON3810

diel: 2760

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON3806

diel: 2744

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOD606

diel: 2755

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO8803

diel: 2798

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO7600

diel: 2769

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 900mA, 600mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO6804

diel: 2805

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4932

diel: 2765

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, 8A, Rds On (max.) @ Id, Vgs: 12.5 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4826

diel: 2775

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOP610

diel: 2727

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4619

diel: 3310

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

Na priania