Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1.15V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.3A (Tc), Rds On (max.) @ Id, Vgs: 95 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 34A (Tc), Rds On (max.) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 850mA (Tc), Rds On (max.) @ Id, Vgs: 280 mOhm @ 850mA, 4.5V, 575 mOhm @ 800mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.7A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A (Tc), Rds On (max.) @ Id, Vgs: 3.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 303A (Tc),
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 27µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 19µA,
Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, 200mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 10mA, 4V,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 7.4A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 170mA, Rds On (max.) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 38A (Ta), 167A (Tc), Rds On (max.) @ Id, Vgs: 1 mOhm @ 38A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, 4.4A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 136 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,
