Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

NX7002BKXBZ

diel: 151844

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 260mA, Rds On (max.) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

Nexperia USA Inc.

PMDPB70XP,115

diel: 189968

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Nexperia USA Inc.

NX3008NBKSH

diel: 194648

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA (Ta), Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

Nexperia USA Inc.

NX6020CAKSX

diel: 2501

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 170mA (Ta), Rds On (max.) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

Infineon Technologies

IRF7504TRPBF

diel: 176860

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania

Infineon Technologies

IRF7304TRPBF

diel: 196744

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania

Infineon Technologies

IPG20N06S415AATMA1

diel: 108935

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Na priania

Vishay Siliconix

SI1024X-T1-GE3

diel: 185794

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 485mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Vishay Siliconix

SIA918EDJ-T1-GE3

diel: 171457

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Tc), Rds On (max.) @ Id, Vgs: 58 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Vishay Siliconix

SIZ730DT-T1-GE3

diel: 117470

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 35A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Vishay Siliconix

SQ4940AEY-T1_GE3

diel: 158519

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Vishay Siliconix

SI4925DDY-T1-GE3

diel: 189530

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SIRB40DP-T1-GE3

diel: 117423

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A (Tc), Rds On (max.) @ Id, Vgs: 3.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

Vishay Siliconix

SQ4284EY-T1_GE3

diel: 100159

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Rds On (max.) @ Id, Vgs: 13.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Vishay Siliconix

SQJQ906EL-T1_GE3

diel: 63261

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160A (Tc), Rds On (max.) @ Id, Vgs: 4.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Vishay Siliconix

SQJ958EP-T1_GE3

diel: 2544

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 34.9 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Vishay Siliconix

SI7942DP-T1-GE3

diel: 63492

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Vishay Siliconix

SI1967DH-T1-GE3

diel: 103126

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SI7252DP-T1-GE3

diel: 70505

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36.7A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Na priania

Vishay Siliconix

SQJB42EP-T1_GE3

diel: 152436

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), Rds On (max.) @ Id, Vgs: 9.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Na priania

Vishay Siliconix

SI4228DY-T1-E3

diel: 190258

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

Rohm Semiconductor

QH8MA4TCR

diel: 163064

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

QS8M11TCR

diel: 196980

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A,

Na priania

Rohm Semiconductor

SP8J65TB1

diel: 69246

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

SH8M12TB1

diel: 181504

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

ON Semiconductor

NTMFD4C88NT3G

diel: 40053

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A, 14.2A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

ON Semiconductor

NVMFD5483NLT3G

diel: 73044

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

ON Semiconductor

MCH6663-TL-H

diel: 186117

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, 1.5A, Rds On (max.) @ Id, Vgs: 188 mOhm @ 900mA, 10V,

Na priania

Diodes Incorporated

DMN53D0LDW-13

diel: 146068

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 360mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Diodes Incorporated

DMG6602SVT-7

diel: 125578

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.8A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

Na priania

Diodes Incorporated

DMG4800LSD-13

diel: 135796

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Na priania

Toshiba Semiconductor and Storage

SSM6N15AFU,LF

diel: 175270

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

Panasonic Electronic Components

MTM78E2B0LBF

diel: 117955

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 2A, 4V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Na priania

Panasonic Electronic Components

UP0187B00L

diel: 2665

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Na priania

Texas Instruments

CSD87588N

diel: 140862

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A, Rds On (max.) @ Id, Vgs: 9.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

Na priania

Micro Commercial Co

SIL2623-TP

diel: 2508

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania