diel: 83651
Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,