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Tranzistory - FET, MOSFET - polia

QS8M13TCR
Rohm Semiconductor

QS8M13TCR

diel: 158531

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 5A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SP8J2TB
Rohm Semiconductor

SP8J2TB

diel: 2628

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SH8M41GZETB
Rohm Semiconductor

SH8M41GZETB

diel: 127920

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.6A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
QH8MA2TCR
Rohm Semiconductor

QH8MA2TCR

diel: 145176

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, 3A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SH8K22TB1
Rohm Semiconductor

SH8K22TB1

diel: 169285

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
QS6M3TR
Rohm Semiconductor

QS6M3TR

diel: 170246

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania
QS6J1TR
Rohm Semiconductor

QS6J1TR

diel: 160158

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania
HUFA76407DK8T-F085
ON Semiconductor

HUFA76407DK8T-F085

diel: 3322

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDMC8200S
ON Semiconductor

FDMC8200S

diel: 148692

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 8.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NTHD3102CT1G
ON Semiconductor

NTHD3102CT1G

diel: 118797

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.1A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
FDC3601N
ON Semiconductor

FDC3601N

diel: 102462

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 500 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania
IRF7389TRPBF
Infineon Technologies

IRF7389TRPBF

diel: 166810

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7907TRPBF
Infineon Technologies

IRF7907TRPBF

diel: 173843

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 11A, Rds On (max.) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania
IRFHM792TRPBF
Infineon Technologies

IRFHM792TRPBF

diel: 82378

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 10µA,

Na priania
IRF7506TRPBF
Infineon Technologies

IRF7506TRPBF

diel: 149700

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF9362TRPBF
Infineon Technologies

IRF9362TRPBF

diel: 188725

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 25µA,

Na priania
IRF7509TRPBF
Infineon Technologies

IRF7509TRPBF

diel: 158332

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, 2A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IPG20N06S4L14AATMA1
Infineon Technologies

IPG20N06S4L14AATMA1

diel: 125877

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Na priania
DMP2004VK-7
Diodes Incorporated

DMP2004VK-7

diel: 179589

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 530mA, Rds On (max.) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
ZXMN3AM832TA
Diodes Incorporated

ZXMN3AM832TA

diel: 2640

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
DMN61D9UDW-7
Diodes Incorporated

DMN61D9UDW-7

diel: 182168

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMC2700UDM-7
Diodes Incorporated

DMC2700UDM-7

diel: 130711

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.34A, 1.14A, Rds On (max.) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMHC3025LSD-13
Diodes Incorporated

DMHC3025LSD-13

diel: 180355

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.2A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
SI1034CX-T1-GE3
Vishay Siliconix

SI1034CX-T1-GE3

diel: 141761

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 610mA (Ta), Rds On (max.) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SQ1922EEH-T1_GE3
Vishay Siliconix

SQ1922EEH-T1_GE3

diel: 2536

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 840mA (Tc), Rds On (max.) @ Id, Vgs: 350 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
SQJB68EP-T1_GE3
Vishay Siliconix

SQJB68EP-T1_GE3

diel: 2512

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Tc), Rds On (max.) @ Id, Vgs: 92 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SIA906EDJ-T1-GE3
Vishay Siliconix

SIA906EDJ-T1-GE3

diel: 181601

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
SI7228DN-T1-GE3
Vishay Siliconix

SI7228DN-T1-GE3

diel: 108156

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 26A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SIZ200DT-T1-GE3
Vishay Siliconix

SIZ200DT-T1-GE3

diel: 2544

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI5908DC-T1-E3
Vishay Siliconix

SI5908DC-T1-E3

diel: 118929

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SQJ912BEP-T1_GE3
Vishay Siliconix

SQJ912BEP-T1_GE3

diel: 2589

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), Rds On (max.) @ Id, Vgs: 11 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
SQ1912EH-T1_GE3
Vishay Siliconix

SQ1912EH-T1_GE3

diel: 132067

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA (Tc), Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
SI7272DP-T1-GE3
Vishay Siliconix

SI7272DP-T1-GE3

diel: 110674

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
NX138AKSF
Nexperia USA Inc.

NX138AKSF

diel: 110186

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 170mA (Ta), Rds On (max.) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
EPC2110
EPC

EPC2110

diel: 26911

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 120V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

Na priania
EPC2108
EPC

EPC2108

diel: 83651

Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

Na priania