Tranzistory - FET, MOSFET - polia

QS8K13TCR

diel: 183897

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SP8K31TB1

diel: 132551

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8KA2GZETB

diel: 158789

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8K5TB1

diel: 122471

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

QS8K21TR

diel: 194558

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

QS8M12TCR

diel: 150953

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8M14TB1

diel: 116026

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 7A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

IRF7104TRPBF

diel: 104561

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

IRF7379TRPBF

diel: 199093

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, 4.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

IPG20N10S4L22AATMA1

diel: 108999

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 25µA,

Na priania

IRF6802SDTRPBF

diel: 60962

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Na priania

IPG20N06S4L26ATMA1

diel: 197280

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 10µA,

Na priania

IRLHS6376TRPBF

diel: 115333

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

Na priania

IRF7902TRPBF

diel: 168640

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 9.7A, Rds On (max.) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,

Na priania

FDS8978

diel: 143107

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

NTZD5110NT1G

diel: 185466

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 294mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

FDG6322C

diel: 124499

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, 410mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

HUFA76413DK8T-F085

diel: 2586

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NTJD5121NT1G

diel: 179833

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 295mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

FDPC8012S

diel: 47700

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 26A, Rds On (max.) @ Id, Vgs: 7 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

MCH6661-TL-W

diel: 182202

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 188 mOhm @ 900mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Na priania

Nexperia USA Inc.

PMDPB85UPE,115

diel: 183418

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 103 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Na priania

Nexperia USA Inc.

PMDT290UNEYL

diel: 2497

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA (Ta), Rds On (max.) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Na priania

SI4559ADY-T1-E3

diel: 141967

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, 3.9A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SQ9945BEY-T1_GE3

diel: 163985

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Rds On (max.) @ Id, Vgs: 64 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI7922DN-T1-E3

diel: 86587

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Na priania

Toshiba Semiconductor and Storage

SIA923AEDJ-T1-GE3

diel: 138927

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

SSM6L12TU,LF

diel: 2495

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), Rds On (max.) @ Id, Vgs: 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Na priania

DMN63D8LV-7

diel: 151779

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 260mA, Rds On (max.) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ZDM4306NTC

diel: 2685

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 330 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

Na priania

DMC2990UDJ-7

diel: 146844

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA, 310mA, Rds On (max.) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

DMN2050LFDB-13

diel: 178082

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania