Tranzistory - FET, MOSFET - polia

DMC2004VK-7

diel: 152592

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 670mA, 530mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

DMP2160UFDB-7

diel: 170482

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

DMP3085LSD-13

diel: 197990

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

DMG1026UV-7

diel: 118631

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA, Rds On (max.) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Na priania

DMC2004DWK-7

diel: 194049

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

DMN6040SSDQ-13

diel: 115786

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Infineon Technologies

IRFH7911TRPBF

diel: 61001

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 28A, Rds On (max.) @ Id, Vgs: 8.6 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania

Infineon Technologies

IRF7530TRPBF

diel: 169065

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

SISF00DN-T1-GE3

diel: 2608

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A (Tc), Rds On (max.) @ Id, Vgs: 5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

SQJ262EP-T1_GE3

diel: 2536

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), 40A (Tc), Rds On (max.) @ Id, Vgs: 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SQS944ENW-T1_GE3

diel: 2484

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 1.25A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI4202DY-T1-GE3

diel: 118970

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12.1A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI1029X-T1-GE3

diel: 164736

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, 190mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SIA533EDJ-T1-GE3

diel: 106980

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SIA975DJ-T1-GE3

diel: 159548

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 41 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SQJ260EP-T1_GE3

diel: 2593

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), 54A (Tc), Rds On (max.) @ Id, Vgs: 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI1026X-T1-GE3

diel: 107231

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI5515CDC-T1-GE3

diel: 185766

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

Na priania

SI1539CDL-T1-GE3

diel: 143752

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, 500mA, Rds On (max.) @ Id, Vgs: 388 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SIA517DJ-T1-GE3

diel: 150755

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SIR770DP-T1-GE3

diel: 139904

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania

SI1553CDL-T1-GE3

diel: 145828

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, 500mA, Rds On (max.) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

FDMA1024NZ

diel: 167329

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 54 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

CPH6636R-TL-W

diel: 161568

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 3A, 4.5V,

Na priania

FDS89161LZ

diel: 125136

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

NTLGD3502NT2G

diel: 150994

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, 3.6A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

FDMS3624S

diel: 88033

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 30A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

FDS89161

diel: 125135

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania