Tranzistory - FET, MOSFET - polia

SP8K2TB

diel: 195188

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8K15TB1

diel: 137046

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

QS8K11TCR

diel: 198738

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

US6M1TR

diel: 141982

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.4A, 1A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8M13GZETB

diel: 173570

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 7A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SI1965DH-T1-GE3

diel: 150223

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SI1016X-T1-GE3

diel: 135127

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 485mA, 370mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SI6926ADQ-T1-E3

diel: 129467

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SI1023CX-T1-GE3

diel: 136072

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SQ3989EV-T1_GE3

diel: 124228

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A (Tc), Rds On (max.) @ Id, Vgs: 155 mOhm @ 400mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

SI4670DY-T1-GE3

diel: 139899

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

SIZ300DT-T1-GE3

diel: 146800

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, 28A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 9.8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

SI7540ADP-T1-GE3

diel: 87195

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 9A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

SI4943CDY-T1-E3

diel: 89694

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SQJ992EP-T1_GE3

diel: 130455

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SQJ570EP-T1_GE3

diel: 165202

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), 9.5A (Tc), Rds On (max.) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI5902BDC-T1-GE3

diel: 125173

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Taiwan Semiconductor Corporation

SQ1539EH-T1_GE3

diel: 2491

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 850mA (Tc), Rds On (max.) @ Id, Vgs: 280 mOhm @ 1A, 10V, 940 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

Na priania

Diodes Incorporated

DMN67D8LDW-13

diel: 104906

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 230mA, Rds On (max.) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Diodes Incorporated

DMN2005DLP4K-7

diel: 162696

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 300mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 900mV @ 100µA,

Na priania

Texas Instruments

CSD85302L

diel: 146505

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard,

Na priania

Texas Instruments

CSD86360Q5D

diel: 67326

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 50A, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

TSM200N03DPQ33 RGG

diel: 2506

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

FDMA1023PZ

diel: 100824

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

FDS8958B

diel: 194401

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 4.5A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NVMFD5485NLT3G

diel: 94178

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

NTJD4158CT1G

diel: 159746

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, 880mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

EFC6612R-TF

diel: 157184

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

Na priania

IRF7105TRPBF

diel: 196914

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

IPG16N10S4L61AATMA1

diel: 195154

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 90µA,

Na priania

IPG20N06S4L14ATMA2

diel: 126778

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Na priania