Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

SI4931DY-T1-GE3

diel: 180864

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.7A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

Na priania

Vishay Siliconix

SI4228DY-T1-GE3

diel: 190253

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

Vishay Siliconix

SI8902AEDB-T2-E1

diel: 3310

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Vishay Siliconix

SQJ960EP-T1_GE3

diel: 77437

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Vishay Siliconix

SIA527DJ-T1-GE3

diel: 180836

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SIB912DK-T1-GE3

diel: 125137

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SI9933CDY-T1-GE3

diel: 185277

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

Vishay Siliconix

SI7942DP-T1-E3

diel: 63525

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Vishay Siliconix

SI7922DN-T1-GE3

diel: 86516

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Na priania

Vishay Siliconix

SI1036X-T1-GE3

diel: 2514

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 610mA (Ta), Rds On (max.) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SI7956DP-T1-GE3

diel: 44000

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Nexperia USA Inc.

NX1029X,115

diel: 166606

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 330mA, 170mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

Nexperia USA Inc.

PMGD780SN,115

diel: 171536

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 490mA, Rds On (max.) @ Id, Vgs: 920 mOhm @ 300mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Rohm Semiconductor

EM6K1T2R

diel: 188653

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

Rohm Semiconductor

QS5K2TR

diel: 110824

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania

Rohm Semiconductor

QH8JA1TCR

diel: 135582

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Na priania

Rohm Semiconductor

UM6K1NTN

diel: 176441

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

Toshiba Semiconductor and Storage

SSM6N56FE,LM

diel: 179879

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA, Rds On (max.) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Na priania

Toshiba Semiconductor and Storage

SSM6N15AFE,LM

diel: 178067

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

ON Semiconductor

FDG6301N-F085

diel: 2507

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

NVMFD5485NLWFT3G

diel: 90689

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

ON Semiconductor

NVLJD4007NZTAG

diel: 139596

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 245mA, Rds On (max.) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania

ON Semiconductor

EFC6605R-TR

diel: 197820

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive,

Na priania

Infineon Technologies

IPG20N04S4L08AATMA1

diel: 137972

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,

Na priania

Infineon Technologies

IPG20N06S415ATMA2

diel: 113173

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Na priania

Infineon Technologies

IPG20N04S4L11ATMA1

diel: 172926

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 15µA,

Na priania

Infineon Technologies

IRF7341GTRPBF

diel: 82222

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

Infineon Technologies

IPG20N04S4L07ATMA1

diel: 104521

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

Na priania

Infineon Technologies

IRF7314TRPBF

diel: 193267

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania

Diodes Incorporated

DMG1023UV-7

diel: 104503

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.03A, Rds On (max.) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Diodes Incorporated

DMN2011UFX-7

diel: 171759

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12.2A (Ta), Rds On (max.) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Diodes Incorporated

DMC1017UPD-13

diel: 2684

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A (Ta), 9.4A (Ta), Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Diodes Incorporated

ZXMD63P03XTA

diel: 60635

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

Texas Instruments

CSD88537ND

diel: 132851

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 250µA,

Na priania

Panasonic Electronic Components

UP0497900L

diel: 2637

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Na priania

Panasonic Electronic Components

UP0487C00L

diel: 188334

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.3V @ 50µA,

Na priania