Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 12A, Rds On (max.) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 9.7A, Rds On (max.) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 14.9 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.9A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, 2.2A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 3.2A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.1A, 4.8A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.8A, 7.2A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14.1A, 20A, Rds On (max.) @ Id, Vgs: 9.4 mOhm @ 11.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),
Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 4A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, 6.8A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 775mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.3A, 18.1A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, 880mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 400V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA, Rds On (max.) @ Id, Vgs: 4.2 Ohm @ 225mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 210A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4V @ 2mA,
