Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

SI6969DQ-T1-E3

diel: 2898

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Na priania

Vishay Siliconix

SI4561DY-T1-GE3

diel: 2816

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.8A, 7.2A, Rds On (max.) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SI1917EDH-T1-E3

diel: 2713

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 370 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA (Min),

Na priania

Vishay Siliconix

SI4830ADY-T1-E3

diel: 2782

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SIZ910DT-T1-GE3

diel: 77131

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Vishay Siliconix

SI4804BDY-T1-GE3

diel: 2795

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SI5511DC-T1-E3

diel: 2730

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.6A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

Vishay Siliconix

SI9926BDY-T1-GE3

diel: 2824

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Vishay Siliconix

SI5999EDU-T1-GE3

diel: 128567

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Vishay Siliconix

SIA911EDJ-T1-GE3

diel: 2796

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Vishay Siliconix

SI7940DP-T1-E3

diel: 2854

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Vishay Siliconix

SI1972DH-T1-GE3

diel: 2790

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 1.3A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania

Vishay Siliconix

SI4966DY-T1-E3

diel: 85796

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Vishay Siliconix

SI4910DY-T1-GE3

diel: 2838

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

ON Semiconductor

FDM3300NZ

diel: 2686

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

FDC6000NZ_F077

diel: 2747

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.3A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

ECH8602M-TL-H

diel: 2823

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 3A, 4.5V,

Na priania

ON Semiconductor

EMH2409-TL-H

diel: 2859

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 2A, 10V,

Na priania

ON Semiconductor

NTND31015NZTAG

diel: 120579

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

ON Semiconductor

NDS9958

diel: 2715

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

EMH2308-TL-H

diel: 186625

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 3A, 4.5V,

Na priania

IXYS

GWM70-01P2

diel: 2692

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 70A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania

IXYS

GWM100-01X1-SMD

diel: 2825

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Na priania

Infineon Technologies

IPG20N06S3L-35

diel: 2854

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 15µA,

Na priania

Infineon Technologies

IRF7389

diel: 2690

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IRF9910TR

diel: 3299

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 12A, Rds On (max.) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

Na priania

Infineon Technologies

IRF7343PBF

diel: 75494

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, 3.4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IRF9952QTRPBF

diel: 2747

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IRF7309QTRPBF

diel: 2755

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IRFI4024H-117P

diel: 2824

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 4V @ 25µA,

Na priania

Trinamic Motion Control GmbH

TMC1420-LA

diel: 2918

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.8A, 7.3A, Rds On (max.) @ Id, Vgs: 26.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Diodes Incorporated

DMC3018LSD-13

diel: 2789

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania

Toshiba Semiconductor and Storage

TPC8207(TE12L)

diel: 2650

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Na priania

Toshiba Semiconductor and Storage

TPCF8402(TE85L,F,M

diel: 2735

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.2A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Na priania

Texas Instruments

CSD75204W15

diel: 2796

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Rohm Semiconductor

SP8M3TB

diel: 2700

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania