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Tranzistory - FET, MOSFET - polia

IRF7389TR
Infineon Technologies

IRF7389TR

diel: 2636

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7754TR
Infineon Technologies

IRF7754TR

diel: 2696

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania
IRF7751
Infineon Technologies

IRF7751

diel: 2659

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
IRF7750GTRPBF
Infineon Technologies

IRF7750GTRPBF

diel: 2784

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
IRF7314QTRPBF
Infineon Technologies

IRF7314QTRPBF

diel: 2754

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania
NTLJD4116NT1G
ON Semiconductor

NTLJD4116NT1G

diel: 2763

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
FDS6894A
ON Semiconductor

FDS6894A

diel: 2729

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
ECH8664R-TL-H
ON Semiconductor

ECH8664R-TL-H

diel: 2888

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 23.5 mOhm @ 3.5A, 4.5V,

Na priania
FDW2504P
ON Semiconductor

FDW2504P

diel: 2772

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 43 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTLJD3115PTAG
ON Semiconductor

NTLJD3115PTAG

diel: 2743

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
NTLUD3191PZTAG
ON Semiconductor

NTLUD3191PZTAG

diel: 2777

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.1A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SIA950DJ-T1-GE3
Vishay Siliconix

SIA950DJ-T1-GE3

diel: 2859

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 190V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, Rds On (max.) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
SI7224DN-T1-E3
Vishay Siliconix

SI7224DN-T1-E3

diel: 139900

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
SI1563DH-T1-GE3
Vishay Siliconix

SI1563DH-T1-GE3

diel: 2825

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, 880mA, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Na priania
SI4569DY-T1-GE3
Vishay Siliconix

SI4569DY-T1-GE3

diel: 2878

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, 7.9A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
SI6969DQ-T1-GE3
Vishay Siliconix

SI6969DQ-T1-GE3

diel: 3349

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Na priania
SIZ916DT-T1-GE3
Vishay Siliconix

SIZ916DT-T1-GE3

diel: 88099

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 40A, Rds On (max.) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI7960DP-T1-E3
Vishay Siliconix

SI7960DP-T1-E3

diel: 2783

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI4501ADY-T1-E3
Vishay Siliconix

SI4501ADY-T1-E3

diel: 2738

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, 4.1A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Na priania
SI3993DV-T1-GE3
Vishay Siliconix

SI3993DV-T1-GE3

diel: 199624

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI6926ADQ-T1-GE3
Vishay Siliconix

SI6926ADQ-T1-GE3

diel: 195139

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI5915BDC-T1-GE3
Vishay Siliconix

SI5915BDC-T1-GE3

diel: 2892

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI4916DY-T1-GE3
Vishay Siliconix

SI4916DY-T1-GE3

diel: 93093

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 10.5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI6928DQ-T1-GE3
Vishay Siliconix

SI6928DQ-T1-GE3

diel: 3373

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI4933DY-T1-E3
Vishay Siliconix

SI4933DY-T1-E3

diel: 3359

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.4A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

Na priania
SI6925ADQ-T1-GE3
Vishay Siliconix

SI6925ADQ-T1-GE3

diel: 2797

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Na priania
ZXMD63C03XTC
Diodes Incorporated

ZXMD63C03XTC

diel: 2695

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
STS4DNF60
STMicroelectronics

STS4DNF60

diel: 2663

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania
UPA2379T1P-E1-A
Renesas Electronics America

UPA2379T1P-E1-A

diel: 102853

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

Na priania
VWM350-0075P
IXYS

VWM350-0075P

diel: 2759

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 340A, Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 250A, 10V, Vgs (th) (Max) @ Id: 4V @ 2mA,

Na priania
SP8K24FU6TB
Rohm Semiconductor

SP8K24FU6TB

diel: 76064

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
MP6M14TCR
Rohm Semiconductor

MP6M14TCR

diel: 2917

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 6A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SP8J1FU6TB
Rohm Semiconductor

SP8J1FU6TB

diel: 98693

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SP8M9TB
Rohm Semiconductor

SP8M9TB

diel: 2650

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
PMWD16UN,518
NXP USA Inc.

PMWD16UN,518

diel: 2709

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.9A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 1mA,

Na priania
PMGD370XN,115
Nexperia USA Inc.

PMGD370XN,115

diel: 2664

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 740mA, Rds On (max.) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania