Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

SI6955ADQ-T1-E3

diel: 2891

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

Vishay Siliconix

SI4834CDY-T1-E3

diel: 135916

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

Na priania

Vishay Siliconix

SI4230DY-T1-GE3

diel: 2831

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SI7216DN-T1-E3

diel: 113570

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

Vishay Siliconix

SI1034X-T1-E3

diel: 2786

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, Rds On (max.) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

Vishay Siliconix

SI3850ADV-T1-E3

diel: 2773

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.4A, 960mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Vishay Siliconix

SI7222DN-T1-GE3

diel: 2787

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Na priania

Vishay Siliconix

SI6966EDQ-T1-E3

diel: 2830

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Na priania

Vishay Siliconix

SI4500BDY-T1-GE3

diel: 2858

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 3.8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Rohm Semiconductor

SP8J3FU6TB

diel: 139446

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

SP8M6TB

diel: 2678

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 3.5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Rohm Semiconductor

SP8J4TB

diel: 2713

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 235 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

Infineon Technologies

IRF8915TR

diel: 2721

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.9A, Rds On (max.) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Infineon Technologies

IRF7380PBF

diel: 76115

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Infineon Technologies

IRF7501TR

diel: 2653

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania

Infineon Technologies

IRF7325PBF

diel: 2703

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Infineon Technologies

IRF7306PBF

diel: 89560

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Infineon Technologies

IPG20N06S415ATMA1

diel: 2968

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

Na priania

ON Semiconductor

NTHC5513T1

diel: 2668

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

ON Semiconductor

NDS9943

diel: 2643

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.8A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 3A, 10V,

Na priania

ON Semiconductor

FDS6961A_F011

diel: 2716

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

FDSS2407

diel: 105427

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 62V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.3A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

MVDF1N05ER2G

diel: 2912

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

MMDF1N05ER2G

diel: 2931

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

FDW2503NZ

diel: 2736

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ON Semiconductor

NTZD3154NT2G

diel: 2755

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

ON Semiconductor

FDS4935

diel: 2757

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

ON Semiconductor

FD6M045N06

diel: 2803

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 4.5 mOhm @ 40A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Diodes Incorporated

ZXMD65P02N8TC

diel: 2713

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

Na priania

Diodes Incorporated

ZXMD63P02XTC

diel: 2747

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

Na priania

Diodes Incorporated

ZDM4206NTC

diel: 2742

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

Na priania

Diodes Incorporated

DMN62D0UDW-7

diel: 163902

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Renesas Electronics America

UPA2373T1P-E4-A

diel: 2961

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

Na priania

Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

diel: 2756

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Na priania

EPC

EPC2104

diel: 24318

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

Na priania

IXYS

GWM220-004P3-SMD SAM

diel: 2762

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania