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Tranzistory - FET, MOSFET - polia

SI3981DV-T1-GE3
Vishay Siliconix

SI3981DV-T1-GE3

diel: 2791

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania
SI5920DC-T1-E3
Vishay Siliconix

SI5920DC-T1-E3

diel: 2798

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI1913EDH-T1-E3
Vishay Siliconix

SI1913EDH-T1-E3

diel: 2794

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA,

Na priania
SI7214DN-T1-GE3
Vishay Siliconix

SI7214DN-T1-GE3

diel: 99144

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI6981DQ-T1-GE3
Vishay Siliconix

SI6981DQ-T1-GE3

diel: 2836

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 300µA,

Na priania
SI6562DQ-T1-E3
Vishay Siliconix

SI6562DQ-T1-E3

diel: 3304

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Na priania
SIZ342DT-T1-GE3
Vishay Siliconix

SIZ342DT-T1-GE3

diel: 178805

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15.7A (Ta), 100A (Tc), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI4330DY-T1-E3
Vishay Siliconix

SI4330DY-T1-E3

diel: 2782

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, Rds On (max.) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI4953ADY-T1-GE3
Vishay Siliconix

SI4953ADY-T1-GE3

diel: 2804

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
SI4622DY-T1-GE3
Vishay Siliconix

SI4622DY-T1-GE3

diel: 2878

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SI9934BDY-T1-E3
Vishay Siliconix

SI9934BDY-T1-E3

diel: 3305

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
SI3948DV-T1-E3
Vishay Siliconix

SI3948DV-T1-E3

diel: 2733

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
SI4914BDY-T1-E3
Vishay Siliconix

SI4914BDY-T1-E3

diel: 118968

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.4A, 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Na priania
SI4618DY-T1-GE3
Vishay Siliconix

SI4618DY-T1-GE3

diel: 64981

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 15.2A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
EMH2408-TL-H
ON Semiconductor

EMH2408-TL-H

diel: 2843

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

Na priania
FDS8934A
ON Semiconductor

FDS8934A

diel: 2753

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
MMDF2N02ER2G
ON Semiconductor

MMDF2N02ER2G

diel: 2690

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NTHD2102PT1G
ON Semiconductor

NTHD2102PT1G

diel: 3360

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FW276-TL-2H
ON Semiconductor

FW276-TL-2H

diel: 3348

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 450V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, Rds On (max.) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

Na priania
NVMD6N03R2G
ON Semiconductor

NVMD6N03R2G

diel: 2901

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
MCH6601-TL-E
ON Semiconductor

MCH6601-TL-E

diel: 168759

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

Na priania
NTQD6866R2G
ON Semiconductor

NTQD6866R2G

diel: 2711

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
NTUD3128NT5G
ON Semiconductor

NTUD3128NT5G

diel: 2747

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF5852
Infineon Technologies

IRF5852

diel: 2710

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Na priania
IRF7751TRPBF
Infineon Technologies

IRF7751TRPBF

diel: 2786

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
IRF7504TR
Infineon Technologies

IRF7504TR

diel: 2662

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania
IRF7319PBF
Infineon Technologies

IRF7319PBF

diel: 85832

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7509TR
Infineon Technologies

IRF7509TR

diel: 2686

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, 2A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7303QTRPBF
Infineon Technologies

IRF7303QTRPBF

diel: 2779

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF6723M2DTRPBF
Infineon Technologies

IRF6723M2DTRPBF

diel: 2819

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania
IRFH4255DTRPBF
Infineon Technologies

IRFH4255DTRPBF

diel: 2936

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 64A, 105A, Rds On (max.) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Na priania
ZXMP3F37DN8TA
Diodes Incorporated

ZXMP3F37DN8TA

diel: 2938

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

diel: 2781

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Na priania
IXTL2X220N075T
IXYS

IXTL2X220N075T

diel: 2763

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 120A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania
SP8K1TB
Rohm Semiconductor

SP8K1TB

diel: 2651

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
UP04878G0L
Panasonic Electronic Components

UP04878G0L

diel: 2789

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

Na priania