Tranzistory - FET, MOSFET - polia

IRF5850TRPBF

diel: 2861

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.2A, Rds On (max.) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7752TR

diel: 2727

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

IRF7910PBF

diel: 2677

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 15 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

NDS9955

diel: 2650

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD4401NT4

diel: 3343

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2521C

diel: 2698

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 3.8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDQ7698S

diel: 2709

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 15A, Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8653-TL-H

diel: 2909

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 4A, 8V,

EFC6611R-A-TF

diel: 143033

HUFA76407DK8T

diel: 2694

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8697R-TL-W

diel: 174631

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V,

ECH8651R-TL-H

diel: 196025

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 5A, 4.5V,

FDS4895C

diel: 2830

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 4.4A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 5.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,

ECH8651R-TL-HX

diel: 2884

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 5A, 4.5V,

NTLJD3181PZTBG

diel: 2812

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.2A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTMD6N02R2

diel: 2688

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.92A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDMJ1028N

diel: 2696

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.2A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS6994S

diel: 3320

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, 8.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1912EDH-T1-E3

diel: 2739

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA (Min),

SI1563DH-T1-E3

diel: 3284

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, 880mA, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

SI4834CDY-T1-GE3

diel: 135475

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

SI6943BDQ-T1-E3

diel: 2779

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

SI7960DP-T1-GE3

diel: 2812

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI7222DN-T1-E3

diel: 2764

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI1553DL-T1

diel: 2791

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA, 410mA, Rds On (max.) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

IXTL2X180N10T

diel: 8037

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A, Rds On (max.) @ Id, Vgs: 7.4 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

FMM150-0075P

diel: 2781

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 120A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

GWM120-0075X1-SMD

diel: 2800

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 110A, Rds On (max.) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

GWM160-0055X1-SMDSAM

diel: 2777

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

TMC1620-TO

diel: 2933

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 4.7A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SP8M5TB

diel: 2649

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SP8M10FU6TB

diel: 2786

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 4.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

STS1DNF20

diel: 3271

PMDPB65UP,115

diel: 2646

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC3035LSD-13

diel: 2777

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, 5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

DMP2100UCB9-7

diel: 181216

Typ FET: 2 P-Channel (Dual) Common Source, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,