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Tranzistory - FET, MOSFET - polia

UM5K1NTR
Rohm Semiconductor

UM5K1NTR

diel: 2679

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania
MP6K11TCR
Rohm Semiconductor

MP6K11TCR

diel: 2911

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SP8K4FU6TB
Rohm Semiconductor

SP8K4FU6TB

diel: 82282

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SP8K3FU6TB
Rohm Semiconductor

SP8K3FU6TB

diel: 110124

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
PHP225,118
Nexperia USA Inc.

PHP225,118

diel: 166064

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 1mA,

Na priania
PMDPB30XN,115
Nexperia USA Inc.

PMDPB30XN,115

diel: 194845

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania
SI5517DU-T1-E3
Vishay Siliconix

SI5517DU-T1-E3

diel: 2805

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI4544DY-T1-GE3
Vishay Siliconix

SI4544DY-T1-GE3

diel: 2824

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
SI4210DY-T1-GE3
Vishay Siliconix

SI4210DY-T1-GE3

diel: 124384

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SI5903DC-T1-E3
Vishay Siliconix

SI5903DC-T1-E3

diel: 2754

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Na priania
SI6966DQ-T1-GE3
Vishay Siliconix

SI6966DQ-T1-GE3

diel: 2838

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
SI1553DL-T1-GE3
Vishay Siliconix

SI1553DL-T1-GE3

diel: 2851

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA, 410mA, Rds On (max.) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Na priania
NTGD3149CT1G
ON Semiconductor

NTGD3149CT1G

diel: 2762

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.2A, 2.4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
FDMJ1023PZ
ON Semiconductor

FDMJ1023PZ

diel: 2762

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI9955DY
ON Semiconductor

SI9955DY

diel: 2721

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
FW907-TL-E
ON Semiconductor

FW907-TL-E

diel: 2854

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 8A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 10A, 10V,

Na priania
NTJD4001NT2G
ON Semiconductor

NTJD4001NT2G

diel: 2721

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Na priania
NTHD4502NT1
ON Semiconductor

NTHD4502NT1

diel: 2711

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.2A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDR8508P
ON Semiconductor

FDR8508P

diel: 2666

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FW707-TL-E
ON Semiconductor

FW707-TL-E

diel: 2866

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 8A, 10V,

Na priania
FDW2510NZ
ON Semiconductor

FDW2510NZ

diel: 2700

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDS8333C
ON Semiconductor

FDS8333C

diel: 2682

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, 3.4A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
IRF7342QTRPBF
Infineon Technologies

IRF7342QTRPBF

diel: 2806

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF5852TR
Infineon Technologies

IRF5852TR

diel: 2705

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Na priania
IRF7316TR
Infineon Technologies

IRF7316TR

diel: 2982

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF9358PBF
Infineon Technologies

IRF9358PBF

diel: 57753

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.2A, Rds On (max.) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 25µA,

Na priania
IRF7757TR
Infineon Technologies

IRF7757TR

diel: 2666

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
IRF7351PBF
Infineon Technologies

IRF7351PBF

diel: 40500

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 50µA,

Na priania
IRFHE4250DTRPBF
Infineon Technologies

IRFHE4250DTRPBF

diel: 2966

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 86A, 303A, Rds On (max.) @ Id, Vgs: 2.75 mOhm @ 27A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Na priania
GWM100-01X1-SL
IXYS

GWM100-01X1-SL

diel: 2846

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Na priania
DMN2041UFDB-7
Diodes Incorporated

DMN2041UFDB-7

diel: 2948

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
ZXMD65N03N8TA
Diodes Incorporated

ZXMD65N03N8TA

diel: 2627

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A,

Na priania
JAN2N7334
Microsemi Corporation

JAN2N7334

diel: 2865

Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania
PMDPB38UNE,115
NXP USA Inc.

PMDPB38UNE,115

diel: 2910

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
STC5DNF30V
STMicroelectronics

STC5DNF30V

diel: 2708

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 2.3A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA,

Na priania
TPIC1502DW
Texas Instruments

TPIC1502DW

diel: 2715

Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

Na priania