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Tranzistory - FET, MOSFET - polia

FDG6301N
ON Semiconductor

FDG6301N

diel: 168456

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDC6561AN
ON Semiconductor

FDC6561AN

diel: 139456

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NVMFD5C680NLT1G
ON Semiconductor

NVMFD5C680NLT1G

diel: 9923

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (max.) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

Na priania
FDS8947A
ON Semiconductor

FDS8947A

diel: 2987

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDML7610S
ON Semiconductor

FDML7610S

diel: 100177

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 17A, Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NTJD4152PT2G
ON Semiconductor

NTJD4152PT2G

diel: 174011

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
NTMD6N02R2G
ON Semiconductor

NTMD6N02R2G

diel: 152790

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.92A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
NVMD6N04R2G
ON Semiconductor

NVMD6N04R2G

diel: 160815

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NVMFD5C672NLT1G
ON Semiconductor

NVMFD5C672NLT1G

diel: 262

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A (Ta), 49A (Tc), Rds On (max.) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

Na priania
FDMD8260LET60
ON Semiconductor

FDMD8260LET60

diel: 41547

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NDS9952A
ON Semiconductor

NDS9952A

diel: 160596

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, 2.9A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania
FDMS3622S
ON Semiconductor

FDMS3622S

diel: 105683

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 34A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
FDMS3610S
ON Semiconductor

FDMS3610S

diel: 116056

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 30A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
FDC6302P
ON Semiconductor

FDC6302P

diel: 184685

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 120mA, Rds On (max.) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
ECH8649-TL-H
ON Semiconductor

ECH8649-TL-H

diel: 2942

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 4A, 4.5V,

Na priania
ECH8601M-TL-H-P
ON Semiconductor

ECH8601M-TL-H-P

diel: 2925

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Ta), Rds On (max.) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Na priania
FDS9945
ON Semiconductor

FDS9945

diel: 120654

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NTMFD4901NFT1G
ON Semiconductor

NTMFD4901NFT1G

diel: 126984

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.3A, 17.9A, Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
GWM100-01X1-SLSAM
IXYS

GWM100-01X1-SLSAM

diel: 2795

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Na priania
CTLDM7120-M832DS TR
Central Semiconductor Corp

CTLDM7120-M832DS TR

diel: 136453

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A (Ta), Rds On (max.) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Na priania
DMC3016LDV-7
Diodes Incorporated

DMC3016LDV-7

diel: 175686

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Tc), 15A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
DMN3016LDV-7
Diodes Incorporated

DMN3016LDV-7

diel: 157491

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
DMN63D8LDWQ-7
Diodes Incorporated

DMN63D8LDWQ-7

diel: 161902

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, Rds On (max.) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
DMN2004DWK-7
Diodes Incorporated

DMN2004DWK-7

diel: 161664

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
PMDPB56XNEAX
Nexperia USA Inc.

PMDPB56XNEAX

diel: 198127

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A (Ta), Rds On (max.) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Na priania
STS5DPF20L
STMicroelectronics

STS5DPF20L

diel: 89710

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
STL20DNF06LAG
STMicroelectronics

STL20DNF06LAG

diel: 155965

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
STL66DN3LLH5
STMicroelectronics

STL66DN3LLH5

diel: 78965

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 78.5A, Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SH8K3TB1
Rohm Semiconductor

SH8K3TB1

diel: 55153

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
IRFH4253DTRPBF
Infineon Technologies

IRFH4253DTRPBF

diel: 74468

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 64A, 145A, Rds On (max.) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Na priania
SIZ350DT-T1-GE3
Vishay Siliconix

SIZ350DT-T1-GE3

diel: 220

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI4590DY-T1-GE3
Vishay Siliconix

SI4590DY-T1-GE3

diel: 189788

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.8A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SI3900DV-T1-GE3
Vishay Siliconix

SI3900DV-T1-GE3

diel: 169893

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
SI1023X-T1-GE3
Vishay Siliconix

SI1023X-T1-GE3

diel: 119178

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Na priania
CSD87335Q3D
Texas Instruments

CSD87335Q3D

diel: 96785

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

Na priania
HCT802
TT Electronics/Optek Technology

HCT802

diel: 2104

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 90V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.1A, Rds On (max.) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania