Tranzistory - FET, MOSFET - polia

FMM150-0075X2F

diel: 4607

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 120A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

VMM85-02F

diel: 1197

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 84A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 8mA,

GWM220-004P3-SL SAM

diel: 2944

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Vgs (th) (Max) @ Id: 4V @ 1mA,

VWM270-0075X2

diel: 697

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 270A, Rds On (max.) @ Id, Vgs: 2.1 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4V @ 500µA,

FDC6327C

diel: 146072

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, 1.9A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMC8298

diel: 2974

NTMFD5C650NLT1G

diel: 6527

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Ta), 111A (Tc), Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 98µA,

NVMFD5C446NWFT1G

diel: 6461

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A (Ta), 127A (Tc), Rds On (max.) @ Id, Vgs: 2.9 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

FDMJ1032C

diel: 2986

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.2A, 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6308P

diel: 158700

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6320C

diel: 131902

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, 140mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

EFC4622R-R-W-E-TR

diel: 2960

FDS4559

diel: 172345

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, 3.5A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD2152PT4

diel: 2980

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 775mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

PMGD175XNEAX

diel: 100101

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 900mA (Ta), Rds On (max.) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

ZXMC3F31DN8TA

diel: 184943

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.8A, 4.9A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN3035LWN-7

diel: 179644

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

DMC3400SDW-7

diel: 148048

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 650mA, 450mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

DMN63D0LT-7

diel: 180893

DMN5L06VKQ-7

diel: 192415

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA (Ta), Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

DMP2065UFDB-7

diel: 144177

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 50 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMHC3A01N8TC

diel: 158505

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.17A, 1.64A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1902DL-T1-GE3

diel: 162518

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA, Rds On (max.) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI4532CDY-T1-GE3

diel: 107643

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.3A, Rds On (max.) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SQ4949EY-T1_GE3

diel: 10794

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Tc), Rds On (max.) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIZ790DT-T1-GE3

diel: 117428

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 35A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI1028X-T1-GE3

diel: 148144

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 650 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI3586DV-T1-E3

diel: 2975

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.1A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

SI4943BDY-T1-E3

diel: 73640

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4904DY-T1-E3

diel: 68509

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

TSM6866SDCA RVG

diel: 9954

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA,

CSD87331Q3D

diel: 140901

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Vgs (th) (Max) @ Id: 2.1V, 1.2V @ 250µA,

MCQ4503-TP

diel: 124864

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, 8.6A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SMA5132

diel: 10943

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A,

SSM6N35AFE,LF

diel: 13256

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA (Ta), Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

UPA2372T1P-E4-A

diel: 2981