Tranzistory - FET, MOSFET - polia

CWDM305ND TR13

diel: 155758

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

CMLDM7003G TR

diel: 145265

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

CMLDM7002AG TR

diel: 187169

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NTMD6P02R2G

diel: 192373

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDMC8097AC

diel: 84069

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A (Ta), 900mA (Tc), Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NTHD4508NT1G

diel: 175416

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDC6401N

diel: 146944

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FW389-TL-2W

diel: 183608

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 2A, 10V,

FDS6986AS_SN00192

diel: 3010

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, 7.9A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6.5A, 10V, 20 mOhm @ 7.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA,

FDC6420C

diel: 172122

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.2A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

DMN601VK-7

diel: 199583

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

DMC2041UFDB-13

diel: 176346

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, 3.2A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

DMN5L06DMKQ-7

diel: 127512

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMTH4007SPDQ-13

diel: 125165

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14.2A, Rds On (max.) @ Id, Vgs: 8.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

DMC25D0UVT-13

diel: 177257

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, 3.2A, Rds On (max.) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

TSM680P06DPQ56 RLG

diel: 16540

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A (Tc), Rds On (max.) @ Id, Vgs: 68 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

TSM4936DCS RLG

diel: 10837

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.9A (Ta), Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FMM65-015P

diel: 2720

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

LKK47-06C5

diel: 2067

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 47A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 44A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

GWM120-0075P3-SMD SAM

diel: 2286

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 118A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

MCQ4559-TP

diel: 163911

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, 3.5A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SM6K2T110

diel: 120997

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TPS1120D

diel: 27273

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 15V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.17A, Rds On (max.) @ Id, Vgs: 180 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

CSD87384M

diel: 105031

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 7.7 mOhm @ 25A, 8V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

CSD83325LT

diel: 151301

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

CSD87355Q5D

diel: 70450

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

SQ3987EV-T1_GE3

diel: 16233

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Tc), Rds On (max.) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI5915DC-T1-E3

diel: 2988

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI3585DV-T1-GE3

diel: 3014

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

SI7956DP-T1-E3

diel: 43929

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI3552DV-T1-GE3

diel: 189573

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SQJ956EP-T1_GE3

diel: 9990

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Tc), Rds On (max.) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

STL15DN4F5

diel: 56764

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 9 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SSM6N42FE(TE85L,F)

diel: 2976

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA, Rds On (max.) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

PMDXB950UPELZ

diel: 106171

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

UPA1764G(0)-E1-AZ

diel: 3007