Tranzistory - FET, MOSFET - polia

FDS6986AS

diel: 190163

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, 7.9A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C446NT1G

diel: 62

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A (Ta), 127A (Tc), Rds On (max.) @ Id, Vgs: 2.9 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

VEC2616-TL-W

diel: 195236

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.5A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDPC8014S

diel: 59646

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, 41A, Rds On (max.) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EFC8822R-X-TF

diel: 2926

MCH6606-TL-EX

diel: 3025

NTMFD4901NFT3G

diel: 74945

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.3A, 17.9A, Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTMFD5C674NLT1G

diel: 6527

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), 42A (Tc), Rds On (max.) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 25µA,

FW274-TL-E

diel: 3030

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDC6321C

diel: 160222

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 680mA, 460mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6321C-F169

diel: 2959

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), 410mA (Ta), Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

DMN2004DWKQ-7

diel: 114141

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA (Ta), Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC4029SSD-13

diel: 193

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Ta), 6.5A (Ta), Rds On (max.) @ Id, Vgs: 24 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMC3016LNS-13

diel: 179652

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Ta), 6.8A (Ta), Rds On (max.) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

ZXMP6A17DN8TA

diel: 113419

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

ZXMN3A04DN8TA

diel: 67976

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 12.6A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN61D8LVTQ-13

diel: 164672

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMP2004DMK-7

diel: 161101

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 550mA, Rds On (max.) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN3032LFDBQ-7

diel: 158335

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

DMC2700UDMQ-7

diel: 273

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.34A (Ta), 1.14A (Ta), Rds On (max.) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, 700 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN2040LTS-13

diel: 129560

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.7A (Ta), Rds On (max.) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

DMN1029UFDB-13

diel: 165180

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.6A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMP2060UFDB-7

diel: 104528

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.2A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI4505DY-T1-GE3

diel: 118954

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

SI7913DN-T1-E3

diel: 93083

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI4554DY-T1-GE3

diel: 106365

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SQ4282EY-T1_GE3

diel: 10808

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc), Rds On (max.) @ Id, Vgs: 12.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

UPA672T-T1-A

diel: 3018

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 20 Ohm @ 10mA, 4V,

CSD87333Q3DT

diel: 70653

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 14.3 mOhm @ 4A, 8V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

CSD87381P

diel: 131899

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 16.3 mOhm @ 8A, 8V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

FMK75-01F

diel: 3528

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 75A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 4mA,

GWM180-004X2-SMD

diel: 3104

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Rds On (max.) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

TPCL4202(TE85L,F)

diel: 2949

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

SLA5064

diel: 9977

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 5A, 4V,

FCAB21520L1

diel: 103474

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.4V @ 1.64mA,

CJ3139KDW-G

diel: 112158

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA (Ta), Rds On (max.) @ Id, Vgs: 520 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,