Tranzistory - FET, MOSFET - polia

AON3613

diel: 2846

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AON7902

diel: 2909

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 13A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AON7820

diel: 2905

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AON6922

diel: 2854

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, 31A, Rds On (max.) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 1.7V @ 250µA,

AON6918

diel: 2899

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, 26.5A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AON6910A

diel: 2864

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 16A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AON6908A

diel: 160676

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.5A, 17A, Rds On (max.) @ Id, Vgs: 8.9 mOhm @ 11.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AON5810

diel: 135258

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.7A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AON5802B

diel: 192395

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AON4807

diel: 2870

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AON4605

diel: 121859

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, 3.4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AON2880

diel: 2900

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 21.5 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AON2800

diel: 2829

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 47 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

AOD607

diel: 2889

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO8818

diel: 2886

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AOC2802

diel: 2855

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate,

AO8804

diel: 2865

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 13 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AO6801A

diel: 2890

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 115 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

AO4830

diel: 2895

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,

AO4821

diel: 189745

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 9A, 4.5V, Vgs (th) (Max) @ Id: 850mV @ 250µA,

AO4613

diel: 2910

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4924

diel: 2854

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 15.8 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AON7932

diel: 2904

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 8.1A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6.6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AON7900

diel: 2883

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 13A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AO8807

diel: 115236

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 850mV @ 250µA,

AUIRF9952Q

diel: 2919

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7379Q

diel: 2916

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, 4.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7342Q

diel: 3348

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7341Q

diel: 2859

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7319Q

diel: 2903

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, 4.9A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7313Q

diel: 2913

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7316Q

diel: 5424

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7304Q

diel: 2891

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AUIRF7309Q

diel: 2875

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7303Q

diel: 2880

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 100µA,

APTJC120AM13VCT1AG

diel: 2840