Tranzistory - FET, MOSFET - polia

APTML202UM18R010T3AG

diel: 2939

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 109A (Tc), Rds On (max.) @ Id, Vgs: 19 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTML1002U60R020T3AG

diel: 3301

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 720 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTM50DHM65T3G

diel: 3350

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 51A, Rds On (max.) @ Id, Vgs: 78 mOhm @ 42A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM120VDA57T3G

diel: 2866

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, Rds On (max.) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM10DHM09T3G

diel: 2896

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTM100TA35SCTPG

diel: 293

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTC90AM60T1G

diel: 1142

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90AM602G

diel: 2917

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC60DSKM70T1G

diel: 2886

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTC60AM83BC1G

diel: 2885

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

APTC60DSKM45T1G

diel: 2935

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTC60AM42F2G

diel: 2862

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 66A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTC60AM83B1G

diel: 2932

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

APTC90H12T1G

diel: 1136

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90TAM60TPG

diel: 424

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90HM60T3G

diel: 666

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90H12T2G

diel: 2898

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90DSK12T1G

diel: 5403

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90DDA12T1G

diel: 2849

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

ALD111910SAL

diel: 38839

ALD111910PAL

diel: 38839

AOC2800

diel: 2871

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate,

AON6974A

diel: 2934

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 30A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

AON6970

diel: 2849

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A, 42A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AON6928

diel: 2893

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 30A, Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AON2809

diel: 2941

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

AON6973A

diel: 2858

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 30A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

AON7826

diel: 2861

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

AO5803E

diel: 2874

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 800 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

AO5800E

diel: 2920

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 400mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO5600E

diel: 2939

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, 500mA, Rds On (max.) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AO4618

diel: 192153

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 7A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AON6974

diel: 2877

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 30A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

AON6936

diel: 2917

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 40A, Rds On (max.) @ Id, Vgs: 4.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AON6938

diel: 2882

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 33A, Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO6801E

diel: 2875

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,