Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 570mA, Rds On (max.) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.7A, 11.3A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,
Typ FET: 4 N-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 90V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, Rds On (max.) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.2A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, 7.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.1A, 4.8A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.4A, 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 1.95A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 28V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 800µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 290mA, 410mA, Rds On (max.) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, 3.7A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.8A, 7.2A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 4 N-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 830mA, Rds On (max.) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A, Rds On (max.) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.7A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, 880mA, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 420mA, Rds On (max.) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
