Menu
SlovenskáSlovenská
RFQ / COUNT
0RFQ / COUNT

Tranzistory - FET, MOSFET - polia

  • Domov
  •  
  • Tranzistory - FET, MOSFET - polia
SI4936ADY-T1-GE3
Vishay Siliconix

SI4936ADY-T1-GE3

diel: 77137

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI4920DY-T1-E3
Vishay Siliconix

SI4920DY-T1-E3

diel: 2966

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SI1905BDH-T1-E3
Vishay Siliconix

SI1905BDH-T1-E3

diel: 3022

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI4904DY-T1-GE3
Vishay Siliconix

SI4904DY-T1-GE3

diel: 68499

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Zoznam želaní
SI4900DY-T1-GE3
Vishay Siliconix

SI4900DY-T1-GE3

diel: 132105

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SIA907EDJT-T1-GE3
Vishay Siliconix

SIA907EDJT-T1-GE3

diel: 150001

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Tc), Rds On (max.) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní
SI4804CDY-T1-E3
Vishay Siliconix

SI4804CDY-T1-E3

diel: 129067

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní
SI4922BDY-T1-GE3
Vishay Siliconix

SI4922BDY-T1-GE3

diel: 93125

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Zoznam želaní
SQJQ900E-T1_GE3
Vishay Siliconix

SQJQ900E-T1_GE3

diel: 69083

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A (Tc), Rds On (max.) @ Id, Vgs: 3.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI6963BDQ-T1-E3
Vishay Siliconix

SI6963BDQ-T1-E3

diel: 3001

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní
SI4539ADY-T1-GE3
Vishay Siliconix

SI4539ADY-T1-GE3

diel: 3314

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, 3.7A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SI4816BDY-T1-E3
Vishay Siliconix

SI4816BDY-T1-E3

diel: 93648

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, 8.2A, Rds On (max.) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI1023X-T1-E3
Vishay Siliconix

SI1023X-T1-E3

diel: 2929

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní
SQ3987EV-T1_GE3
Vishay Siliconix

SQ3987EV-T1_GE3

diel: 16233

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Tc), Rds On (max.) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI5915DC-T1-E3
Vishay Siliconix

SI5915DC-T1-E3

diel: 2988

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní
SI3585DV-T1-GE3
Vishay Siliconix

SI3585DV-T1-GE3

diel: 3014

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Zoznam želaní
SI7956DP-T1-E3
Vishay Siliconix

SI7956DP-T1-E3

diel: 43929

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Zoznam želaní
SI3552DV-T1-GE3
Vishay Siliconix

SI3552DV-T1-GE3

diel: 189573

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SQJ956EP-T1_GE3
Vishay Siliconix

SQJ956EP-T1_GE3

diel: 9990

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Tc), Rds On (max.) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI7940DP-T1-GE3
Vishay Siliconix

SI7940DP-T1-GE3

diel: 2920

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní
SI4936ADY-T1-E3
Vishay Siliconix

SI4936ADY-T1-E3

diel: 77138

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI5933CDC-T1-GE3
Vishay Siliconix

SI5933CDC-T1-GE3

diel: 181122

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI7223DN-T1-GE3
Vishay Siliconix

SI7223DN-T1-GE3

diel: 9952

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI9933CDY-T1-E3
Vishay Siliconix

SI9933CDY-T1-E3

diel: 154905

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní
SIZ346DT-T1-GE3
Vishay Siliconix

SIZ346DT-T1-GE3

diel: 9988

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A (Tc), 30A (Tc), Rds On (max.) @ Id, Vgs: 28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA,

Zoznam želaní
SIZ728DT-T1-GE3
Vishay Siliconix

SIZ728DT-T1-GE3

diel: 110130

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 35A, Rds On (max.) @ Id, Vgs: 7.7 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní
SI4288DY-T1-GE3
Vishay Siliconix

SI4288DY-T1-GE3

diel: 118896

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.2A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI5938DU-T1-E3
Vishay Siliconix

SI5938DU-T1-E3

diel: 2940

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI4650DY-T1-E3
Vishay Siliconix

SI4650DY-T1-E3

diel: 2953

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

Zoznam želaní
SI5997DU-T1-GE3
Vishay Siliconix

SI5997DU-T1-GE3

diel: 168303

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 54 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní
SIZ350DT-T1-GE3
Vishay Siliconix

SIZ350DT-T1-GE3

diel: 220

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní
SI4590DY-T1-GE3
Vishay Siliconix

SI4590DY-T1-GE3

diel: 189788

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.8A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní
SI3900DV-T1-GE3
Vishay Siliconix

SI3900DV-T1-GE3

diel: 169893

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní
SI1023X-T1-GE3
Vishay Siliconix

SI1023X-T1-GE3

diel: 119178

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní
SI1902DL-T1-GE3
Vishay Siliconix

SI1902DL-T1-GE3

diel: 162518

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 660mA, Rds On (max.) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní
SI4532CDY-T1-GE3
Vishay Siliconix

SI4532CDY-T1-GE3

diel: 107643

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.3A, Rds On (max.) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní