Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 18

19MT050XF

diel: 2704

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 31A, Rds On (max.) @ Id, Vgs: 220 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 6V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI1033X-T1-GE3

diel: 174190

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 145mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIA777EDJ-T1-GE3

diel: 187147

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, 4.5A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4505DY-T1-E3

diel: 118937

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4808DY-T1-E3

diel: 80900

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI7962DP-T1-E3

diel: 38892

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.1A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7900AEDN-T1-GE3

diel: 139913

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Zoznam želaní

Vishay Siliconix

SUD50NP04-77P-T4E3

diel: 118918

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI6968BEDQ-T1-GE3

diel: 192809

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4936CDY-T1-E3

diel: 152475

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI3948DV-T1-GE3

diel: 139953

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI6975DQ-T1-E3

diel: 56765

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

Zoznam želaní

Vishay Siliconix

SI6975DQ-T1-GE3

diel: 89660

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

Zoznam želaní

Vishay Siliconix

SI6954ADQ-T1-GE3

diel: 102782

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI7904BDN-T1-GE3

diel: 165688

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4276DY-T1-E3

diel: 139906

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4943BDY-T1-GE3

diel: 73684

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI6954ADQ-T1-E3

diel: 197681

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI8900EDB-T2-E1

diel: 45537

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Vgs (th) (Max) @ Id: 1V @ 1.1mA,

Zoznam želaní

Vishay Siliconix

SI7913DN-T1-GE3

diel: 93108

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI6968BEDQ-T1-E3

diel: 118914

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7904BDN-T1-E3

diel: 165763

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4948BEY-T1-GE3

diel: 125231

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4946BEY-T1-E3

diel: 150097

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4808DY-T1-GE3

diel: 80857

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI3951DV-T1-GE3

diel: 199685

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7923DN-T1-E3

diel: 101885

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI5902BDC-T1-E3

diel: 125159

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A (Tc), Rds On (max.) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI5908DC-T1-GE3

diel: 118967

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ904DT-T1-GE3

diel: 140725

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, 16A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7923DN-T1-GE3

diel: 101842

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ918DT-T1-GE3

diel: 132159

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 28A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4505DY-T1-GE3

diel: 118954

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 3.8A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7913DN-T1-E3

diel: 93083

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4554DY-T1-GE3

diel: 106365

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SQ4282EY-T1_GE3

diel: 10808

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc), Rds On (max.) @ Id, Vgs: 12.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní