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Tranzistory - FET, MOSFET - polia

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  • Tranzistory - FET, MOSFET - polia
SI4500BDY-T1-GE3
Vishay Siliconix

SI4500BDY-T1-GE3

diel: 2858

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 3.8A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní
SIA950DJ-T1-GE3
Vishay Siliconix

SIA950DJ-T1-GE3

diel: 2859

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 190V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 950mA, Rds On (max.) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní
SI7224DN-T1-E3
Vishay Siliconix

SI7224DN-T1-E3

diel: 139900

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní
SI1563DH-T1-GE3
Vishay Siliconix

SI1563DH-T1-GE3

diel: 2825

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.13A, 880mA, Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Zoznam želaní
SI4569DY-T1-GE3
Vishay Siliconix

SI4569DY-T1-GE3

diel: 2878

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, 7.9A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Zoznam želaní
SI6969DQ-T1-GE3
Vishay Siliconix

SI6969DQ-T1-GE3

diel: 3349

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní
SIZ916DT-T1-GE3
Vishay Siliconix

SIZ916DT-T1-GE3

diel: 88099

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 40A, Rds On (max.) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní
SI7960DP-T1-E3
Vishay Siliconix

SI7960DP-T1-E3

diel: 2783

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI4501ADY-T1-E3
Vishay Siliconix

SI4501ADY-T1-E3

diel: 2738

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, 4.1A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Zoznam želaní
SI3993DV-T1-GE3
Vishay Siliconix

SI3993DV-T1-GE3

diel: 199624

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI6926ADQ-T1-GE3
Vishay Siliconix

SI6926ADQ-T1-GE3

diel: 195139

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI5915BDC-T1-GE3
Vishay Siliconix

SI5915BDC-T1-GE3

diel: 2892

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI4916DY-T1-GE3
Vishay Siliconix

SI4916DY-T1-GE3

diel: 93093

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 10.5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI6928DQ-T1-GE3
Vishay Siliconix

SI6928DQ-T1-GE3

diel: 3373

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI4933DY-T1-E3
Vishay Siliconix

SI4933DY-T1-E3

diel: 3359

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.4A, Rds On (max.) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

Zoznam želaní
SI6925ADQ-T1-GE3
Vishay Siliconix

SI6925ADQ-T1-GE3

diel: 2797

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.3A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Zoznam želaní
SI3981DV-T1-GE3
Vishay Siliconix

SI3981DV-T1-GE3

diel: 2791

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Zoznam želaní
SI5920DC-T1-E3
Vishay Siliconix

SI5920DC-T1-E3

diel: 2798

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní
SI1913EDH-T1-E3
Vishay Siliconix

SI1913EDH-T1-E3

diel: 2794

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA,

Zoznam želaní
SI7214DN-T1-GE3
Vishay Siliconix

SI7214DN-T1-GE3

diel: 99144

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI6981DQ-T1-GE3
Vishay Siliconix

SI6981DQ-T1-GE3

diel: 2836

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 300µA,

Zoznam želaní
SI6562DQ-T1-E3
Vishay Siliconix

SI6562DQ-T1-E3

diel: 3304

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

Zoznam želaní
SIZ342DT-T1-GE3
Vishay Siliconix

SIZ342DT-T1-GE3

diel: 178805

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15.7A (Ta), 100A (Tc), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní
SI4330DY-T1-E3
Vishay Siliconix

SI4330DY-T1-E3

diel: 2782

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, Rds On (max.) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI4953ADY-T1-GE3
Vishay Siliconix

SI4953ADY-T1-GE3

diel: 2804

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SI4622DY-T1-GE3
Vishay Siliconix

SI4622DY-T1-GE3

diel: 2878

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní
SI9934BDY-T1-E3
Vishay Siliconix

SI9934BDY-T1-E3

diel: 3305

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní
SI3948DV-T1-E3
Vishay Siliconix

SI3948DV-T1-E3

diel: 2733

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SI4914BDY-T1-E3
Vishay Siliconix

SI4914BDY-T1-E3

diel: 118968

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.4A, 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Zoznam želaní
SI4618DY-T1-GE3
Vishay Siliconix

SI4618DY-T1-GE3

diel: 64981

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 15.2A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní
SI6933DQ-T1-E3
Vishay Siliconix

SI6933DQ-T1-E3

diel: 2879

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní
SI4310BDY-T1-E3
Vishay Siliconix

SI4310BDY-T1-E3

diel: 2851

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, 9.8A, Rds On (max.) @ Id, Vgs: 11 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI6544BDQ-T1-GE3
Vishay Siliconix

SI6544BDQ-T1-GE3

diel: 2882

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, 3.8A, Rds On (max.) @ Id, Vgs: 43 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní
SI4965DY-T1-E3
Vishay Siliconix

SI4965DY-T1-E3

diel: 2893

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní
SI4941EDY-T1-E3
Vishay Siliconix

SI4941EDY-T1-E3

diel: 2795

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Zoznam želaní
SI7904DN-T1-GE3
Vishay Siliconix

SI7904DN-T1-GE3

diel: 2820

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 935µA,

Zoznam želaní