Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 18

SI7216DN-T1-GE3

diel: 113546

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4963BDY-T1-E3

diel: 147270

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI1926DL-T1-GE3

diel: 137693

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 370mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SQJQ906E-T1_GE3

diel: 8627

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A (Tc), Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4542DY-T1-E3

diel: 5348

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SIZ320DT-T1-GE3

diel: 9923

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), 40A (Tc), Rds On (max.) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ926DT-T1-GE3

diel: 127180

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A (Tc), 60A (Tc), Rds On (max.) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ328DT-T1-GE3

diel: 221

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZF916DT-T1-GE3

diel: 281

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Ta), 40A (Tc), Rds On (max.) @ Id, Vgs: 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7905DN-T1-E3

diel: 73624

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI1900DL-T1-GE3

diel: 337

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA (Ta), 590mA (Ta), Rds On (max.) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SISB46DN-T1-GE3

diel: 104289

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 34A (Tc), Rds On (max.) @ Id, Vgs: 11.71 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ988DT-T1-GE3

diel: 16265

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A (Tc), 60A (Tc), Rds On (max.) @ Id, Vgs: 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI6913DQ-T1-E3

diel: 71472

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 400µA,

Zoznam želaní

Vishay Siliconix

SI4670DY-T1-E3

diel: 139946

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI5922DU-T1-GE3

diel: 127635

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 19.2 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ348DT-T1-GE3

diel: 277

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A (Ta), 30A (Tc), Rds On (max.) @ Id, Vgs: 7.12 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIA931DJ-T1-GE3

diel: 160155

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI5904DC-T1-E3

diel: 2972

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4965DY-T1-GE3

diel: 3019

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SI1902CDL-T1-GE3

diel: 181662

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.1A, Rds On (max.) @ Id, Vgs: 235 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIA936EDJ-T1-GE3

diel: 3020

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SQ4532AEY-T1_GE3

diel: 10809

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.3A (Tc), 5.3A (Tc), Rds On (max.) @ Id, Vgs: 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4532ADY-T1-GE3

diel: 135915

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, 3A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI7236DP-T1-E3

diel: 45599

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4936BDY-T1-GE3

diel: 125167

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ902DT-T1-GE3

diel: 110652

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZ720DT-T1-GE3

diel: 109371

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 8.7 mOhm @ 16.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4200DY-T1-GE3

diel: 161224

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SQJ560EP-T1_GE3

diel: 9941

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), 18A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4542DY-T1-GE3

diel: 2980

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Zoznam želaní

Vishay Siliconix

SQJ941EP-T1-GE3

diel: 3133

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Zoznam želaní

Vishay Siliconix

SQJ200EP-T1_GE3

diel: 165186

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, 60A, Rds On (max.) @ Id, Vgs: 8.8 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SIZF906DT-T1-GE3

diel: 98746

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A (Tc), Rds On (max.) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI4963BDY-T1-GE3

diel: 89691

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Zoznam želaní

Vishay Siliconix

SI5517DU-T1-GE3

diel: 139934

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Zoznam želaní