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Tranzistory - FET, MOSFET - polia

CMRDM3575 TR
Central Semiconductor Corp

CMRDM3575 TR

diel: 101846

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, 140mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF9952
Infineon Technologies

IRF9952

diel: 2678

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7105PBF
Infineon Technologies

IRF7105PBF

diel: 95108

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
IRF7311TR
Infineon Technologies

IRF7311TR

diel: 3313

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Na priania
IRF6802SDTR1PBF
Infineon Technologies

IRF6802SDTR1PBF

diel: 2905

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

Na priania
IRF6702M2DTRPBF
Infineon Technologies

IRF6702M2DTRPBF

diel: 2830

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania
IRF9362PBF
Infineon Technologies

IRF9362PBF

diel: 2823

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 25µA,

Na priania
IRF7316GTRPBF
Infineon Technologies

IRF7316GTRPBF

diel: 2626

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
IRF7555TR
Infineon Technologies

IRF7555TR

diel: 2893

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
IRF5810
Infineon Technologies

IRF5810

diel: 2637

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
IRFH7911TR2PBF
Infineon Technologies

IRFH7911TR2PBF

diel: 2817

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 28A, Rds On (max.) @ Id, Vgs: 8.6 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania
FDC6036P_F077
ON Semiconductor

FDC6036P_F077

diel: 2788

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDS6812A
ON Semiconductor

FDS6812A

diel: 2711

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDG6302P
ON Semiconductor

FDG6302P

diel: 2666

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 140mA, Rds On (max.) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTQD4154ZR2
ON Semiconductor

NTQD4154ZR2

diel: 2660

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTTD1P02R2
ON Semiconductor

NTTD1P02R2

diel: 2729

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.45A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania
NTJD4105CT2
ON Semiconductor

NTJD4105CT2

diel: 2725

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FW813-TL-H
ON Semiconductor

FW813-TL-H

diel: 2907

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5A, 10V,

Na priania
MMDF1N05ER2
ON Semiconductor

MMDF1N05ER2

diel: 2640

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NTJD2152PT4G
ON Semiconductor

NTJD2152PT4G

diel: 2775

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 775mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
NTLJD3119CTAG
ON Semiconductor

NTLJD3119CTAG

diel: 2878

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, 2.3A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
NTZD3152PT5G
ON Semiconductor

NTZD3152PT5G

diel: 2734

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 430mA, Rds On (max.) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
QJD1210SA2
Powerex Inc.

QJD1210SA2

diel: 2896

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

Na priania
DMC3036LSD-13
Diodes Incorporated

DMC3036LSD-13

diel: 2792

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Na priania
ZXMN3A04DN8TC
Diodes Incorporated

ZXMN3A04DN8TC

diel: 2746

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 12.6A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
DMN32D2LV-7
Diodes Incorporated

DMN32D2LV-7

diel: 141799

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
ZVN4206NTC
Diodes Incorporated

ZVN4206NTC

diel: 2706

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V,

Na priania
SI5975DC-T1-E3
Vishay Siliconix

SI5975DC-T1-E3

diel: 2864

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 1mA (Min),

Na priania
SI6973DQ-T1-E3
Vishay Siliconix

SI6973DQ-T1-E3

diel: 2882

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Na priania
SI1988DH-T1-GE3
Vishay Siliconix

SI1988DH-T1-GE3

diel: 2796

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SIZ900DT-T1-GE3
Vishay Siliconix

SIZ900DT-T1-GE3

diel: 87000

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A, 28A, Rds On (max.) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI7958DP-T1-E3
Vishay Siliconix

SI7958DP-T1-E3

diel: 3297

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.2A, Rds On (max.) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI4816DY-T1-GE3
Vishay Siliconix

SI4816DY-T1-GE3

diel: 2804

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, 7.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania
EPC2103ENG
EPC

EPC2103ENG

diel: 2868

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Na priania
STL60N32N3LL
STMicroelectronics

STL60N32N3LL

diel: 2652

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 32A, 60A, Rds On (max.) @ Id, Vgs: 9.2 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 1µA,

Na priania
SP8K5FU6TB
Rohm Semiconductor

SP8K5FU6TB

diel: 180120

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania