Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 100

AO6808

diel: 128425

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6810

diel: 195

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A, Rds On (max.) @ Id, Vgs: 4.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOC2870

diel: 192

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOE6932

diel: 253

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 55A (Tc), 85A (Tc), Rds On (max.) @ Id, Vgs: 5 mOhm @ 20A, 10V, 1.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6906A

diel: 141209

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 10A, Rds On (max.) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6992

diel: 167444

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 31A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO7800

diel: 101225

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 900mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6934A

diel: 192175

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 30A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON5816

diel: 242

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A (Ta), Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON3820

diel: 237

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Ta), Rds On (max.) @ Id, Vgs: 8.9 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6926

diel: 176157

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, 12A, Rds On (max.) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4616

diel: 137081

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOSD62666E

diel: 234

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A (Ta), Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4892

diel: 184805

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4832

diel: 146127

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOD607A

diel: 189762

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc), 12A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO9926C

diel: 121665

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4854

diel: 178118

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AOE6930

diel: 215

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A (Tc), 85A (Tc), Rds On (max.) @ Id, Vgs: 4.3 mOhm @ 20A, 10V, 0.83 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO6608

diel: 153844

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A (Ta), 3.3A (Ta), Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6994

diel: 185070

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, 26A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6912A

diel: 191296

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 13.8A, Rds On (max.) @ Id, Vgs: 13.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO8808A

diel: 192801

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 14 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON2810

diel: 115713

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO6802

diel: 113666

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON5820

diel: 177428

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AON6934

diel: 185097

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, 30A, Rds On (max.) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO4884

diel: 124312

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO9926B

diel: 120793

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania

Alpha & Omega Semiconductor Inc.

AO6601

diel: 110328

Typ FET: N and P-Channel Complementary, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.3A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

Advanced Linear Devices Inc.

ALD212900APAL

diel: 19683

Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 80mA, Rds On (max.) @ Id, Vgs: 14 Ohm, Vgs (th) (Max) @ Id: 10mV @ 20µA,

Na priania

Advanced Linear Devices Inc.

ALD110800PCL

diel: 22645

Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Max) @ Id: 20mV @ 1µA,

Na priania

Advanced Linear Devices Inc.

ALD110800ASCL

diel: 15215

Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Max) @ Id: 10mV @ 1µA,

Na priania

Microsemi Corporation

APTM100H45SCTG

diel: 480

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, Rds On (max.) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania

Microsemi Corporation

APTM100A13SCG

diel: 292

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Na priania

Microsemi Corporation

APTM50AM24SCG

diel: 372

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Na priania