diel: 412
Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 55A (Tc), Rds On (max.) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),