Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 31A, Rds On (max.) @ Id, Vgs: 220 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 6V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, Rds On (max.) @ Id, Vgs: 6 Ohm @ 115mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 230mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 115mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 320mA (Ta), Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 300mA (Ta), Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 320mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 340mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 300mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
Typ FET: 4 P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 750mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 300mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 115mA, Rds On (max.) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Max) @ Id: 360mV @ 1µA,
Typ FET: 2 P-Channel (Dual) Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 270 Ohm @ 5V, Vgs (th) (Max) @ Id: 1.2V @ 10µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4.2V, Vgs (th) (Max) @ Id: 220mV @ 1µA,
Typ FET: 2 N and 2 P-Channel Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40mA, 16mA, Rds On (max.) @ Id, Vgs: 75 Ohm @ 5V, Vgs (th) (Max) @ Id: 1V @ 10µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 2.7V, Vgs (th) (Max) @ Id: 1.26V @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 5.9V, Vgs (th) (Max) @ Id: 3.35V @ 1µA,
