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Tranzistory - FET, MOSFET - polia

APTM120H140FT1G
Microsemi Corporation

APTM120H140FT1G

diel: 1785

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 1.68 Ohm @ 7A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania
APTM50H10FT3G
Microsemi Corporation

APTM50H10FT3G

diel: 1187

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 37A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania
APTM100A13DG
Microsemi Corporation

APTM100A13DG

diel: 505

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Na priania
APTC60VDAM24T3G
Microsemi Corporation

APTC60VDAM24T3G

diel: 1155

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTM100H45FT3G
Microsemi Corporation

APTM100H45FT3G

diel: 858

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, Rds On (max.) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTM100A18FTG
Microsemi Corporation

APTM100A18FTG

diel: 728

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 43A, Rds On (max.) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTMC120TAM12CTPAG
Microsemi Corporation

APTMC120TAM12CTPAG

diel: 63

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 220A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Na priania
APTM20HM20FTG
Microsemi Corporation

APTM20HM20FTG

diel: 799

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 89A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60HM70T3G
Microsemi Corporation

APTC60HM70T3G

diel: 1635

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania
APTC60AM35SCTG
Microsemi Corporation

APTC60AM35SCTG

diel: 860

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 36A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Na priania
APTC80DDA15T3G
Microsemi Corporation

APTC80DDA15T3G

diel: 1954

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Na priania
APTM50HM75FT3G
Microsemi Corporation

APTM50HM75FT3G

diel: 880

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 46A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60AM242G
Microsemi Corporation

APTC60AM242G

diel: 951

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTM50AM19FG
Microsemi Corporation

APTM50AM19FG

diel: 440

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 163A, Rds On (max.) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTM120DU15G
Microsemi Corporation

APTM120DU15G

diel: 383

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTC60DDAM35T3G
Microsemi Corporation

APTC60DDAM35T3G

diel: 1490

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Na priania
APTC60TAM24TPG
Microsemi Corporation

APTC60TAM24TPG

diel: 401

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTM10TAM19FPG
Microsemi Corporation

APTM10TAM19FPG

diel: 905

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 70A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania
APTC60TAM35PG
Microsemi Corporation

APTC60TAM35PG

diel: 622

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Na priania
APTM20AM10STG
Microsemi Corporation

APTM20AM10STG

diel: 814

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 175A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTC60HM70SCTG
Microsemi Corporation

APTC60HM70SCTG

diel: 825

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania
APTM20HM20STG
Microsemi Corporation

APTM20HM20STG

diel: 874

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 89A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60AM35T1G
Microsemi Corporation

APTC60AM35T1G

diel: 1737

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Na priania
APTM120A20SG
Microsemi Corporation

APTM120A20SG

diel: 517

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 50A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Na priania
APTMC60TLM14CAG
Microsemi Corporation

APTMC60TLM14CAG

diel: 121

Typ FET: 4 N-Channel (Three Level Inverter), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 219A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Na priania
APTM20DUM04G
Microsemi Corporation

APTM20DUM04G

diel: 485

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 372A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTMC120AM12CT3AG
Microsemi Corporation

APTMC120AM12CT3AG

diel: 202

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 220A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Na priania
APTC60TAM21SCTPAG
Microsemi Corporation

APTC60TAM21SCTPAG

diel: 341

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 116A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 88A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 6mA,

Na priania
APTM100A23STG
Microsemi Corporation

APTM100A23STG

diel: 772

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTC60AM24T1G
Microsemi Corporation

APTC60AM24T1G

diel: 1322

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTMC120TAM17CTPAG
Microsemi Corporation

APTMC120TAM17CTPAG

diel: 81

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 147A (Tc), Rds On (max.) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 20mA (Typ),

Na priania
APTM60H23FT1G
Microsemi Corporation

APTM60H23FT1G

diel: 2039

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania
APTM50AM38FTG
Microsemi Corporation

APTM50AM38FTG

diel: 808

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM120A29FTG
Microsemi Corporation

APTM120A29FTG

diel: 635

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 34A, Rds On (max.) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM50DHM38G
Microsemi Corporation

APTM50DHM38G

diel: 726

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM20DUM08TG
Microsemi Corporation

APTM20DUM08TG

diel: 866

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 208A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania