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Tranzistory - FET, MOSFET - polia

APTM10AM02FG
Microsemi Corporation

APTM10AM02FG

diel: 400

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 495A, Rds On (max.) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

Na priania
APTM10DSKM09T3G
Microsemi Corporation

APTM10DSKM09T3G

diel: 1457

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Na priania
APTC60BBM24T3G
Microsemi Corporation

APTC60BBM24T3G

diel: 1133

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTML602U12R020T3AG
Microsemi Corporation

APTML602U12R020T3AG

diel: 485

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 45A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Na priania
APTC60HM70BT3G
Microsemi Corporation

APTC60HM70BT3G

diel: 1289

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania
APTM20HM16FTG
Microsemi Corporation

APTM20HM16FTG

diel: 748

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 104A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTM20AM10FTG
Microsemi Corporation

APTM20AM10FTG

diel: 856

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 175A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTMC120AM09CT3AG
Microsemi Corporation

APTMC120AM09CT3AG

diel: 162

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 295A (Tc), Rds On (max.) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 40mA (Typ),

Na priania
APTC60DDAM70T1G
Microsemi Corporation

APTC60DDAM70T1G

diel: 2258

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania
APTC60AM45BC1G
Microsemi Corporation

APTC60AM45BC1G

diel: 1478

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Na priania
APTM10TAM09FPG
Microsemi Corporation

APTM10TAM09FPG

diel: 558

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Na priania
APTM100DSK35T3G
Microsemi Corporation

APTM100DSK35T3G

diel: 1267

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60AM45B1G
Microsemi Corporation

APTC60AM45B1G

diel: 1093

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Na priania
APTM100H46FT3G
Microsemi Corporation

APTM100H46FT3G

diel: 1492

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 19A, Rds On (max.) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTM50HM75FTG
Microsemi Corporation

APTM50HM75FTG

diel: 809

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 46A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60HM24T3G
Microsemi Corporation

APTC60HM24T3G

diel: 757

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTM100AM90FG
Microsemi Corporation

APTM100AM90FG

diel: 379

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 78A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTM20DUM05G
Microsemi Corporation

APTM20DUM05G

diel: 536

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 317A, Rds On (max.) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTM100H35FTG
Microsemi Corporation

APTM100H35FTG

diel: 731

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTM50AM35FTG
Microsemi Corporation

APTM50AM35FTG

diel: 766

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 99A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM50HM65FTG
Microsemi Corporation

APTM50HM65FTG

diel: 767

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 51A, Rds On (max.) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTM100TA35FPG
Microsemi Corporation

APTM100TA35FPG

diel: 533

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60HM70T1G
Microsemi Corporation

APTC60HM70T1G

diel: 1743

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Na priania
APTM50HM35FG
Microsemi Corporation

APTM50HM35FG

diel: 448

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 99A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM60A11FT1G
Microsemi Corporation

APTM60A11FT1G

diel: 2026

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Na priania
APTC60DHM24T3G
Microsemi Corporation

APTC60DHM24T3G

diel: 1204

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTC60AM24SCTG
Microsemi Corporation

APTC60AM24SCTG

diel: 712

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Na priania
APTMC120HM17CT3AG
Microsemi Corporation

APTMC120HM17CT3AG

diel: 306

Typ FET: 4 N-Channel, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 147A (Tc), Rds On (max.) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

Na priania
APTM50DDA10T3G
Microsemi Corporation

APTM50DDA10T3G

diel: 1671

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 37A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Na priania
APTM50HM38FG
Microsemi Corporation

APTM50HM38FG

diel: 461

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Na priania
APTM120A15FG
Microsemi Corporation

APTM120A15FG

diel: 396

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTC80TDU15PG
Microsemi Corporation

APTC80TDU15PG

diel: 936

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Na priania
APTM50AM17FG
Microsemi Corporation

APTM50AM17FG

diel: 423

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Na priania
APTM10DUM02G
Microsemi Corporation

APTM10DUM02G

diel: 488

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 495A, Rds On (max.) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

Na priania
APTMC170AM60CT1AG
Microsemi Corporation

APTMC170AM60CT1AG

diel: 196

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1700V (1.7kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 50A (Tc), Rds On (max.) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

Na priania
APTC60VDAM45T1G
Microsemi Corporation

APTC60VDAM45T1G

diel: 1797

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Na priania