Tranzistory - FET, MOSFET - polia

AO4822L_101

diel: 2926

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4822AL

diel: 2937

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4822AL_102

diel: 2930

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4821L

diel: 2889

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 9A, 4.5V, Vgs (th) (Max) @ Id: 850mV @ 250µA,

AO4822_101

diel: 2919

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4818BL_101

diel: 2886

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4818L

diel: 2884

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4812L_101

diel: 2974

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4812L

diel: 2904

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4812_101

diel: 2947

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4807L

diel: 2938

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4806L

diel: 2910

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 14 mOhm @ 9.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AO4803L

diel: 2914

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 52 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4805L_101

diel: 2939

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

AO4803AL

diel: 2963

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4801L

diel: 2906

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), Rds On (max.) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

AO4801AS

diel: 2971

AO4801AL

diel: 2897

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

AO4801AL_001

diel: 2928

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

AO4800L

diel: 2903

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AO4616L_102

diel: 3349

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4614B_101

diel: 2973

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4614BL_103

diel: 2888

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4613_001

diel: 2944

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AON6971

diel: 2884

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, 40A, Rds On (max.) @ Id, Vgs: 5.7 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

AO4952

diel: 190149

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 10.5 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

APTMC60TLM55CT3AG

diel: 222

Typ FET: 4 N-Channel (Three Level Inverter), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 48A (Tc), Rds On (max.) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),

APTMC120AM16CD3AG

diel: 166

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 131A (Tc), Rds On (max.) @ Id, Vgs: 20 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 5mA (Typ),

APTMC60TL11CT3AG

diel: 420

Typ FET: 4 N-Channel (Three Level Inverter), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A (Tc), Rds On (max.) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

APTC90AM60SCTG

diel: 647

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90H12SCTG

diel: 686

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC60DSKM70CT1G

diel: 2914

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTC60DDAM70CT1G

diel: 3376

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTML502UM90R020T3AG

diel: 2888

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 52A, Rds On (max.) @ Id, Vgs: 108 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTC60DDAM45CT1G

diel: 2940

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTML102UM09R004T3AG

diel: 2898

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 154A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,