Tranzistory - FET, MOSFET - polia

FDS9958-F085

diel: 26954

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 105 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDS8858CZ

diel: 153147

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.6A, 7.3A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 8.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8660-TL-H

diel: 177854

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 2A, 10V,

FDS8960C

diel: 111818

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 35V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTLUD3A260PZTAG

diel: 147558

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 200 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

EFC2J003NUZTCG

diel: 117536

NTZD3154NT1G

diel: 148850

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDC6312P

diel: 122807

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 115 mOhm @ 2.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS6910

diel: 118152

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD4401NT1G

diel: 126305

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NVMFD5853NLWFT1G

diel: 90449

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

NTUD3170NZT5G

diel: 153569

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTMFD4C87NT1G

diel: 29744

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A, 14.9A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDS8978

diel: 143107

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NTZD5110NT1G

diel: 185466

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 294mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDG6322C

diel: 124499

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA, 410mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

HUFA76413DK8T-F085

diel: 2586

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 49 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD5121NT1G

diel: 179833

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 295mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDPC8012S

diel: 47700

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 26A, Rds On (max.) @ Id, Vgs: 7 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

MCH6661-TL-W

diel: 182202

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 188 mOhm @ 900mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

NVMFD5873NLWFT1G

diel: 71856

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, Rds On (max.) @ Id, Vgs: 13 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NTJD4105CT1G

diel: 180528

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS4935BZ

diel: 185680

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDME1024NZT

diel: 131909

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDMA1023PZ

diel: 100824

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS8958B

diel: 194401

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 4.5A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5485NLT3G

diel: 94178

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NTJD4158CT1G

diel: 159746

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, 880mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

EFC6612R-TF

diel: 157184

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

FDS6990AS

diel: 162854

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

NTJD5121NT2G

diel: 197174

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 295mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDS6982AS

diel: 164073

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, 8.6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMA1028NZ

diel: 179878

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

EFC4C002NLTDG

diel: 85433

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

HUFA76407DK8T-F085

diel: 3322

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMC8200S

diel: 148692

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 8.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,