Tranzistory - FET, MOSFET - polia

FDS8926A

diel: 2702

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDW2502P

diel: 2769

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2508P

diel: 2776

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDD8424H-F085A

diel: 2940

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 6.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC6612R-A-TF

diel: 2936

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, 2.5V Drive,

ECH8652-TL-H

diel: 2893

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 3A, 4.5V,

NTHD4102PT3G

diel: 2764

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI9936DY

diel: 2776

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NDC7002N_SB9G007

diel: 2756

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 510mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FW906-TL-E

diel: 2911

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 6A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 8A, 10V,

VEC2315-TL-H

diel: 2838

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 137 mOhm @ 1.5A, 10V,

EMH2314-TL-H

diel: 198673

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V,

NTLJD3183CZTBG

diel: 2772

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.6A, 2.2A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTHC5513T1G

diel: 148927

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NVJD5121NT1G

diel: 163473

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 295mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

MCH6606-TL-E

diel: 2897

EFC6611R-TF

diel: 136094

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

NTHD3100CT1G

diel: 110314

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 3.2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDS8958

diel: 2722

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDC6020C_F077

diel: 2752

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.9A, 4.2A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDC6036P

diel: 3318

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 44 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDD8424H_F085

diel: 2811

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 6.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

USB10H

diel: 2674

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.9A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

MCH6662-TL-H

diel: 2857

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 1A, 4.5V,

MCH6613-TL-E

diel: 167978

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, 200mA, Rds On (max.) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDG6313N

diel: 2667

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTMFD4C88NT1G

diel: 36648

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A, 14.2A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTLJD2104PTAG

diel: 2796

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

FDG6304P_D87Z

diel: 2747

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA, Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NVMFD5489NLT3G

diel: 103434

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EMH2412-TL-H

diel: 2854

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 3A, 4.5V,

NTZD3156CT1G

diel: 2797

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

HUFA76504DK8T

diel: 2775

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Rds On (max.) @ Id, Vgs: 200 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC4627R-A-TR

diel: 134119

NSTJD1155LT1G

diel: 2852

ECH8659-M-TL-H

diel: 2889

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,